Specific features of recombination processes in CdTe films produced in different temperature conditions of growth and subsequent annealing

An analytical approach to model manufacturing a drift heterobipolar transistors: On approach to optimize technological process to increase integration rate

“…This changing leads to decreasing of elements integrated circuits [Pankratov and Bulaeva, 2013]. One way to increase performance of elements of integrated circuits is determination of materials with higher values of charge carriers mobility [Stepanenko, 1980;Alexenko and Shagurin, 1990;Gotra, 1991;Avaev et al, 1991;Lachin and Savelov, 2001;Polishscuk, 2004;Volovich, 2006;Kerentsev and Lanin, 2008;Ageev et al, 2009;Tsai et al, 2009;Gol'dman et al, 2011;Peng et al, 2006;Ou-Yang et al, 2010;Wang et al, 2012;Alexandrov et al, 1998;Ermolovich et al, 2009;Sinsermsuksakul et al, 2013;Reynolds et al, 2013]. Another way to increase the performance is elaboration of new technological processes and modification of the existing one.…”

An approach to increase the integration rate of planar drift heterobipolar transistors

“…This change leads to decrease in elements integrated circuits [21]. One way to increase performance of elements of integrated circuits is determination of materials with higher values of charge carriers mobility [1][2][3][4][5][6][7][8][9][10][11][12][13][14][22][23][24][25]. Other ways to increase performance are elaboration of new technological processes and modification of existing ones.…”

Untitled

“…In the present time several actual problems of the solid state electronics (such as increasing of performance, reliability and density of elements of integrated circuits: diodes, field-effect and bipolar transistors) are intensively solving [1][2][3][4][5][6]. To increase the performance of these devices it is attracted an interest determination of materials with higher values of charge carriers mobility [7][8][9][10]. One way to decrease dimensions of elements of integrated circuits is manufacturing them in thin film heterostructures [3][4][5]11].…”

“…We used the same method of averaging of function correction to solve the Eqs. (8). Framework this paper we determine concentration of dopant, concentrations of radiation defects and components of displacement vector by using the second-order approximation framework method of averaging of function corrections.…”