Spectroscopy And Structural Study On CdSe Thin Films Deposited By Chemical Bath Deposition

Abstract

Cadmium selenide (CdSe) thin films were prepared by chemical bath deposition technique on glass substrates using cadmium acetate dihydrate as a source of Cd 2+ ions, and sodium selenosulphate as a source of Se 2ions respectively. Triethanolamine and ammonia were used as complexing and pH controlling agent. Films were deposited at different bath temperatures ranging from room temperature to 80 o C while the pH value was kept constant around 10.50 ±0.10. We determined elemental composition of deposited film by X-ray photoelectron spectroscopy. Optical properties of films deposited at different bath temperatures are studied by absorption spectra and parameters like thickness, band gap and absorption coefficient were calculated from the optical transmission spectra. The optical spectra showed a small blue shift and the band gap was found to be greater than the bulk phase. Raman measurements performed at room temperature using Helium-neon laser and Argon laser confirmed the presence of longitudinal optical phonon modes. The selected area electron diffraction pattern for CdSe thin films indicated that they are having mixed nature i.e. both single crystalline and polycrystalline nature with planes of diffraction rings corresponding to cubic structure of CdSe respectively.

A facile and low cost strategy to synthesize Cd1−xZnxSe thin films for photoelectrochemical performance: effect of zinc content

“…20,21 CdSe is an n-type semiconductor material with a direct band gap energy of 1.74 eV and it is a very promising candidate for photoelectrochemical and photoconductive cells. 22 ZnSe is a very important material for luminescent and light emitting devices. 23,24 However, CdSe is found to undergo photocorrosion when used in photoelectrochemical cells, but ZnSe is more stable, though less photoactive due to its wide band gap (2.7 eV).…”