Sperimagnetism in Perpendicularly Magnetized Co-Tb Alloy-Based Thin Films

Hussain, Riaz; Aakansha,; Brahma, B.; Basumatary, Rajmoni; Brahma, R.; Ravi, S.; Srivastava, S. K.

doi:10.1007/s10948-019-05176-8

Cited by 15 publications

(1 citation statement)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The addition of layers of CoAlZr adjacent to the TbCo removes the truncation of the Tb-Co bonds at the interface, thus re-establishing the bulk PMA of the TbCo in the interfacial layers. A similar explanation could be applicable to the variation in critical thickness for PMA in TbCo on different seed layers [1,3,9,24] as well as to the observation of sperimagnetism [35] in some TbCo samples [36,37].…”

Section: Resultsmentioning

confidence: 69%

Competing interface and bulk anisotropies in Co-rich TbCo amorphous thin films

Thorarinsdottir

Thorbjarnardóttir

Arnalds

et al. 2023

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

We study the magnetic properties of amorphous Tb$_x$Co$_{100-x}$ films with $x$ in the range 8$-$12~at\% and with a thickness of 5$-$100~nm. In this range the magnetic properties are shaped by a competition between a perpendicular bulk magnetic anisotropy and an in-plane interface anisotropy, in addition to the changes in magnetization. This results in a temperature controllable spin reorientation transition from in-plane to out-of-plane which is thickness and composition dependent. Furthermore, we show that perpendicular anisotropy is recovered throughout an entire TbCo/CoAlZr multilayer, where neither TbCo nor CoAlZr single layers exhibit perpendicular anisotropy. This illustrates the important role of the TbCo interfaces in the overall effective anisotropy.

show abstract

Section: Resultsmentioning

confidence: 69%

Competing interface and bulk anisotropies in Co-rich TbCo amorphous thin films

Thorarinsdottir

Thorbjarnardóttir

Arnalds

et al. 2023

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

show abstract

Magnetic properties and I‐V characteristics of DC magnetron sputtered [Co (0.2 nm)/Ni (0.4 nm)]₁₀ thin films

Sarkar,

Hussain,

Rajbanshi

et al. 2024

MetalMat

View full text Add to dashboard Cite

A set of [Co(0.2 nm)/Ni(0.4 nm)]10 multilayers (MLs) thin films were fabricated on silicon and glass substrate under various distinct conditions (i) as‐prepared films without an under‐layer, (ii) films with a copper [Cu(2 nm)] underlayer (UL), (iii) films with an in situ annealed Ta/Cu UL during sputtering, and (iv) films with post‐annealing treatment, by using a DC magnetron sputtering machine. The [Co/Ni] MLs thin films prepared under various conditions exhibit in‐plane magnetic anisotropic behavior except as‐prepared films which show isotropic behavior. The maximum saturation magnetization was observed in the as‐prepared films prepared on both silicon and glass substrate. The Ta/Cu UL in situ annealing followed by post‐annealing films exhibit highest coercivity, moderate saturation magnetization but lowest squareness in contrast to the films deposited under other conditions. The I‐V curves of the films show diode like behavior with breakdown voltage of 42, 58, 14, and 21 V for [Co/Ni] MLs under four different conditions.

show abstract

Influence of Cu insertion layer on magnetic property of [Co(0.3 nm)/Ni(0.6 nm)]10/Cu/[Co(0.3 nm)/Ni(0.6 nm)]10 spin valve thin films

et al. 2021

View full text Add to dashboard Cite

Sperimagnetism in Perpendicularly Magnetized Co-Tb Alloy-Based Thin Films

Cited by 15 publications

References 10 publications

Competing interface and bulk anisotropies in Co-rich TbCo amorphous thin films

Competing interface and bulk anisotropies in Co-rich TbCo amorphous thin films

Magnetic properties and I‐V characteristics of DC magnetron sputtered [Co (0.2 nm)/Ni (0.4 nm)]₁₀ thin films

Influence of Cu insertion layer on magnetic property of [Co(0.3 nm)/Ni(0.6 nm)]10/Cu/[Co(0.3 nm)/Ni(0.6 nm)]10 spin valve thin films

Contact Info

Product

Resources

About

Sperimagnetism in Perpendicularly Magnetized Co-Tb Alloy-Based Thin Films

Cited by 15 publications

References 10 publications

Competing interface and bulk anisotropies in Co-rich TbCo amorphous thin films

Competing interface and bulk anisotropies in Co-rich TbCo amorphous thin films

Magnetic properties and I‐V characteristics of DC magnetron sputtered [Co (0.2 nm)/Ni (0.4 nm)]10 thin films

Influence of Cu insertion layer on magnetic property of [Co(0.3 nm)/Ni(0.6 nm)]10/Cu/[Co(0.3 nm)/Ni(0.6 nm)]10 spin valve thin films

Contact Info

Product

Resources

About

Magnetic properties and I‐V characteristics of DC magnetron sputtered [Co (0.2 nm)/Ni (0.4 nm)]₁₀ thin films