Spherical Model of Shallow Acceptor States in Semiconductors

Baldereschi, A.; Lipari, N. O.

doi:10.1103/physrevb.8.2697

Cited by 795 publications

(466 citation statements)

References 15 publications

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“…This is a good approximation for many typical semiconductors, including GaAs, since the electron-hole envelope function extends over many unit cells due to the screening of the Coulomb interaction by the static dielectric constant. 42,70,77,78,79 As a consequence of making the spherical approximation, the phase shifts and Coulomb enhancements we find in this paper are independent of crystal orientation.…”

Section: Discussionmentioning

confidence: 62%

“…As a result of the difference between m hh and m lh there is 'envelope-hole coupling,' 77 which is a spin-orbit-like coupling between the orbital angular momentum of the exciton envelope function and the total angular momentum of the valence band Γ point Bloch functions. 78 Baldereschi and Lipari split the effective mass Hamiltonian into a sum of terms based on symmetry, and showed that in a spherical approximation the envelope-hole coupling could be treated as a perturbation to the diagonal part, which has analytic, hydrogenic eigenstates. 70,79 In order to extract the main physics, while preserving the simplicity of the two-band model, we neglect envelope-hole coupling entirely.…”

Section: Modelmentioning

confidence: 99%

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Excitonic effects on the two-color coherent control of interband transitions in bulk semiconductors

Bhat

Sipe

2005

Phys. Rev. B

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Quantum interference between one-and two-photon absorption pathways allows coherent control of interband transitions in unbiased bulk semiconductors; carrier population, carrier spin polarization, photocurrent injection, and spin current injection may all be controlled. We extend the theory of these processes to include the electron-hole interaction. Our focus is on photon energies that excite carriers above the band edge, but close enough to it so that transition amplitudes based on low order expansions in k are applicable; both allowed-allowed and allowed-forbidden two-photon transition amplitudes are included. Analytic solutions are obtained using the effective mass theory of Wannier excitons; degenerate bands are accounted for, but envelope-hole coupling is neglected. We find a Coulomb enhancement of two-color coherent control process, and relate it to the Coulomb enhancements of one-and two-photon absorption. In addition, we find a frequency dependent phase shift in the dependence of photocurrent and spin current on the optical phases.The phase shift decreases monotonically from π/2 at the band edge to 0 over an energy range governed by the exciton binding energy. It is the difference between the partial wave phase shifts of the electron-hole envelope function reached by one-and two-photon pathways.

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Section: Discussionmentioning

confidence: 62%

Section: Modelmentioning

confidence: 99%

Excitonic effects on the two-color coherent control of interband transitions in bulk semiconductors

Bhat

Sipe

2005

Phys. Rev. B

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“…Основное состояние одиночной локали-зованной дырки в рамках сферического приближения гамильтониана Латтинджера [9,10] принадлежит пред-ставлению Ŵ 8 и соответствует полному моменту J = 3/2. Учет тождественности частиц и обменного взаимодей-ствия приводит к тому, что две локализованные дырки, входящие в A + -центр, описываются полным моментом F = 0, 2 [2].…”

Section: структура уровней a + -центра в квантовой яме при учете дефоunclassified

Тонкая структура уровней и пьезоспектроскопия A-=SUP=-+-=/SUP=--центров в квантовых ямах GaAs/AlGaAs

Petrov¹,

Kokurin²,

Иванов³

et al. 2018

Физика Твердого Тела

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Experimental and theoretical piezospectroscopic investigation of A^+ centers in GaAs/AlGaAs quantum wells doped with beryllium is presented. Spectra of linearly polarized photoluminescence are studied experimentally depending on applied uniaxial pressure. A model of the A^+ center in the quantum well in the presence of uniaxial deformation in the plane of the quantum well has been constructed. Analytical expressions for the level energy, optical transition intensities, and polarization ratio have been obtained. In the framework of the proposed theory, the experimentally observed change in the polarization ratio depending on pressure and the shift of the line maximum towards short waves are explained.

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“…At the time of these experimental studies there existed no theoretical calculations which would have allowed them to label the lines with the correct symmetry and quantum numbers. In the meantime, detailed calculations have been performed by Baldereschi and Lipari [9].…”

Section: Elemental Shallow Donors and Acceptorsmentioning

confidence: 99%

Far infrared fourier transform spectroscopy of semiconductors

Häller

1987

Mikrochim Acta

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Spherical Model of Shallow Acceptor States in Semiconductors

Cited by 795 publications

References 15 publications

Excitonic effects on the two-color coherent control of interband transitions in bulk semiconductors

Excitonic effects on the two-color coherent control of interband transitions in bulk semiconductors

Тонкая структура уровней и пьезоспектроскопия A-=SUP=-+-=/SUP=--центров в квантовых ямах GaAs/AlGaAs

Far infrared fourier transform spectroscopy of semiconductors

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