Spin- and angle-resolved photoemission on topological materials

Dil, J. Hugo

doi:10.1088/2516-1075/ab168b

Cited by 40 publications

(38 citation statements)

References 161 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This reinforces the consensus that CD-ARPES is not related directly to the spin texture of the system as already observed in other cases (see, e.g. [41][42][43][44][45]) and cannot replace the much more experimentally demanding spin-resolved ARPES for spin analysis [46,47] (see [48] for a detailed discussion). Nevertheless CD-ARPES is a useful tool to probe the orbital symmetry.…”

Section: Bi/inas(1 1 1)a Valence Band Pessupporting

confidence: 86%

Bi ultra-thin crystalline films on InAs(1 1 1)A and B substrates: a combined core-level and valence-band angle-resolved and dichroic photoemission study

et al. 2019

View full text Add to dashboard Cite

The growth of Bi on both the In-terminated (A) face and the As-terminated (B)face of InAs(1 1 1) has been investigated by low-energy electron diffraction, scanning tunnelling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In4d and Bi 5d 5/2 photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the early stage the Bi growth on the A face is epitaxial, contrary to that on the B face that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a Bi deposit of ≈10 bi-layers on the A face is identical to that of bulkBi, while more than≈30 bi-layers are needed for the B face. Both bulk and surface electronic states observed are well accounted for by fully relativistic ab initio calculations performed using the one-step model of photoemission. These calculations are used to analyse the dichroic photoemission data recorded in the vicinity of the Fermi level around the G point of the Brillouin zone.

show abstract

Section: Bi/inas(1 1 1)a Valence Band Pessupporting

confidence: 86%

Bi ultra-thin crystalline films on InAs(1 1 1)A and B substrates: a combined core-level and valence-band angle-resolved and dichroic photoemission study

et al. 2019

View full text Add to dashboard Cite

show abstract

“…4(c). The main spin polarization signal points along the x direction, while the measured out-of-plane spin polarization is most likely due to spin interference during the photoemission process [34] and |P y | 0.04 (see Appendix A 5 for details).…”

Section: A Films On Highly Doped Substratementioning

confidence: 99%

“…As mentioned, the main spin polarization signal points along the x direction, while |P y | 0.04 and |P z | 0.2. The measured out-of-plane spin polarization is most likely due to spin interference during the photoemission process [34]. The simultaneous fit [35] of the total intensities and the spin polarizations along the sample x, y, and z axes are denoted by the green lines.…”

Section: Sarpes Of Films On Different Substratesmentioning

confidence: 99%

Single spin-polarized Fermi surface in SrTiO3 thin films

Guedes

Muff

Fanciulli

et al. 2020

Phys. Rev. Research

View full text Add to dashboard Cite

The 2D electron gas (2DEG) formed at the surface of SrTiO 3 (001) has attracted great interest because of its fascinating physical properties and potential as a novel electronic platform, but up to now has eluded a comprehensible way to tune its properties. Using angle-resolved photoemission spectroscopy with and without spin detection, we here show that the band filling can be controlled by growing thin SrTiO 3 films on Nb-doped SrTiO 3 (001) substrates. This results in a single spin-polarized 2D Fermi surface, which bears potential as a platform for Majorana physics. Based on our results, it can furthermore be concluded that the 2DEG does not extend more than two unit cells into the film and that its properties depend on the amount of SrO x at the surface and possibly the dielectric response of the system.

show abstract

“…This property is at the heart of a new class of materials called topological insulators [1,2], possibly interesting for technological applications in low power electronics. Their characteristic two-dimensional (2D) energy momentum relation, or band structure, is similar to the graphene model system and their spin texture was studied in surface derived states for numerous materials [3]. For these systems, the strong spin-orbit interaction (SOI) is responsible for topologically non-trivial states with an insulating bulk and protected surface conductivity.…”

Section: Introductionmentioning

confidence: 99%

Ferroelectric Self-Poling in GeTe Films and Crystals

et al. 2019

View full text Add to dashboard Cite

Ferroelectric materials are used in actuators or sensors because of their non-volatile macroscopic electric polarization. GeTe is the simplest known diatomic ferroelectric endowed with exceedingly complex physics related to its crystalline, amorphous, thermoelectric, and—fairly recently discovered—topological properties, making the material potentially interesting for spintronics applications. Typically, ferroelectric materials possess random oriented domains that need poling to achieve macroscopic polarization. By using X-ray absorption fine structure spectroscopy complemented with anomalous diffraction and piezo-response force microscopy, we investigated the bulk ferroelectric structure of GeTe crystals and thin films. Both feature multi-domain structures in the form of oblique domains for films and domain colonies inside crystals. Despite these multi-domain structures which are expected to randomize the polarization direction, our experimental results show that at room temperature there is a preferential ferroelectric order remarkably consistent with theoretical predictions from ideal GeTe crystals. This robust self-poled state has high piezoelectricity and additional poling reveals persistent memory effects.

show abstract

Spin- and angle-resolved photoemission on topological materials

Cited by 40 publications

References 161 publications

Bi ultra-thin crystalline films on InAs(1 1 1)A and B substrates: a combined core-level and valence-band angle-resolved and dichroic photoemission study

Bi ultra-thin crystalline films on InAs(1 1 1)A and B substrates: a combined core-level and valence-band angle-resolved and dichroic photoemission study

Single spin-polarized Fermi surface in SrTiO3 thin films

Ferroelectric Self-Poling in GeTe Films and Crystals

Contact Info

Product

Resources

About