Spin and valley filter across line defect in silicene

Wang, Sake; Ren, Chongdan; Li, Yunfang; Tian, Hua; Lu, Wei-Tao; Sun, Minglei

doi:10.7567/apex.11.053004

Cited by 30 publications

(34 citation statements)

References 46 publications

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“…Researchers of late, have started paying attention to Group-IV elements based two dimensional (2D) materials such as silicene [1][2][3][4][5][6][7], germanene [8] and stanene [8] owing to their similarity in electronic properties with graphene and their possible application in nanoelectronic devices [9]. Among these, stanene has drawn keen interest due to it's possible application as quantum hall insulator [10], topological insulator [11] and topological superconductor [12].…”

Section: Introductionmentioning

confidence: 99%

Structural and electronic properties of Stanene-BeO heterobilayer

Chakraborty

Borgohain

Adhikary

2020

Mater. Res. Express

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Properties of Sn/BeO heterostructure formed with beryllium oxide (BeO) monolayer and 2D stanene (Sn) is studied in this work. The first-principle study is employed here to systematically investigate the structural stability and electrical properties of the Sn/BeO heterostructure. The results from simulations reveal that the introduction of BeO not only leads to a significant bandgap opening of 98 meV, but it also retains the various intrinsic electrical properties of stanene to a large extent. The effect of spin-orbit coupling (SOC) is studied both in pristine stanene as well as in Sn/BeO heterostructure. The Sn/BeO heterostructure shows the Rashba-type of spin-splitting under SOC, which is very promising for application in spintronic devices. Moreover, it is also observed that the bandgap can be tuned by applying external strain and electric field, while the characteristic Dirac cone is maintained throughout. The application of an external electric field is found to be more effective in bandgap modulation. It leads to a linear change in the bandgap, with a bandgap value of 402 meV for 4 V nm −1 . The results obtained from our study indicate that Sn/BeO heterostructure can be a suitable material for the development of spintronic devices.

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Section: Introductionmentioning

confidence: 99%

Structural and electronic properties of Stanene-BeO heterobilayer

Chakraborty

Borgohain

Adhikary

2020

Mater. Res. Express

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“…We model the electronic structure of the graphene line defect shown in Fig. 1 by a nearest-neighbor tight-binding Hamiltonian [13,31,32]…”

Section: Modelmentioning

confidence: 99%

Controllable valley filter in graphene topological line defect with magnetic field

Tian

Ren

Zhou

et al. 2020

Preprint

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The extended line defect of graphene is an extraordinary candidate in valleytronics while the high valley polarization can only occur for electrons with high incidence angles which brings about tremendous challenges to experimental realization. In this paper, we propose a simple scheme to filter one conical valley state by applying a local magnetic field. It is found that due to the movement of the Dirac points, the transmission profiles of the two valleys are shifted along the injection-angle axis at the same pace, resulting in the peak transmission of one valley state being reduced drastically while remaining unaffected for the other valley state, which induces nearly perfect valley polarization. This scheme can be easily implemented in experiments and plays a key role in graphene valleytronics.

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“…Recently, the extended line defects (ELDs) in silicene have been extensively investigated according to first-principles calculations[15, 16], and the 5-5-8 ELD (abbreviated as "line defect” in the following) was found to be the most stable and most readily formed structure. The spin and valley polarization of the silicene line defect have been investigated theoretically[17–19]. The formation of a line defect can be visualized as the stitching of the zigzag edges of two Si grains by the adsorbed Si atoms, where either side of the line defect shows pseudoedge-state-like behavior and the grain boundaries of the zigzag edge act as the pseudo-edge[16].…”

Section: Introductionmentioning

confidence: 99%

Controllable Valley Polarization Using Silicene Double Line Defects Due to Rashba Spin-Orbit Coupling

et al. 2019

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We theoretically investigate the valley polarization in silicene with two parallel line defects due to Rashba spin-orbit coupling (RSOC). It is found that as long as RSOC exceeds the intrinsic spin-orbit coupling (SOC), the transmission coefficients of the two valleys oscillate with the same periodicity and intensity, which consists of wide transmission peaks and zero-transmission plateaus. However, in the presence of a perpendicular electric field, the oscillation periodicity of the first valley increases, whereas that of the second valley shortens, generating the corresponding wide peak-zero plateau regions, where perfect valley polarization can be achieved. Moreover, the valley polarizability can be changed from 1 to −1 by controlling the strength of the electric field. Our findings establish a different route for generating valley-polarized current by purely electrical means and open the door for interesting applications of semiconductor valleytronics.

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Spin and valley filter across line defect in silicene

Cited by 30 publications

References 46 publications

Structural and electronic properties of Stanene-BeO heterobilayer

Structural and electronic properties of Stanene-BeO heterobilayer

Controllable valley filter in graphene topological line defect with magnetic field

Controllable Valley Polarization Using Silicene Double Line Defects Due to Rashba Spin-Orbit Coupling

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