2020
DOI: 10.1063/5.0012187
|View full text |Cite
|
Sign up to set email alerts
|

Spin coherence and depths of single nitrogen-vacancy centers created by ion implantation into diamond via screening masks

Abstract: We characterize single nitrogen-vacancy (NV) centers created by 10-keVN+ ion implantation into diamond via thin SiO2 layers working as screening masks. Despite the relatively high acceleration energy compared with standard ones (<5keV) used to create near-surface NV centers, the screening masks modify the distribution of N+ ions to be peaked at the diamond surface [Ito et al., Appl. Phys. Lett. 110, 213105 (2017)]. We examine the relation between coherence times of the NV electronic spins and their dept… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2021
2021
2023
2023

Publication Types

Select...
4

Relationship

0
4

Authors

Journals

citations
Cited by 4 publications
(1 citation statement)
references
References 50 publications
0
1
0
Order By: Relevance
“…The NV layers were created by 2.5, 5, and 10 keV nitrogen ion implantation ( 15 N) in an electronic grade (e6) CVD-grown diamond, where the beam energies define the resulting NV center depth (as shown in Figure S1). The depths were simulated using “SRIM: The Stopping and Range of Ions in Matter” software .…”
Section: Methodsmentioning
confidence: 99%
“…The NV layers were created by 2.5, 5, and 10 keV nitrogen ion implantation ( 15 N) in an electronic grade (e6) CVD-grown diamond, where the beam energies define the resulting NV center depth (as shown in Figure S1). The depths were simulated using “SRIM: The Stopping and Range of Ions in Matter” software .…”
Section: Methodsmentioning
confidence: 99%