Spin Dependent Transport in an Electron Gas With Magnetic Disorder

Abstract

We consider a two dimensional semiconductor with carriers subject to spinorbit interactions and scattered by randomly distributed magnetic impurities. We solve the time-dependent Schrödinger equation to investigate the relationship between the geometrical properties of the wavefunction and the system's spin dependent transport properties. Even in the absence of localized states, interference effects modify the carrier diffusion, as revealed by the appearance of power laws dependent on the impurity concentration. For stronger disorder, we find a localization transition characterized by a fractal wavefunction and enhanced spin transport.