Spin injection from Fe3Si into GaAs

Kawaharazuka, Atsushi; Ramsteiner, M.; Herfort, J.; Schönherr, H.-P.; Kostial, H.; Ploog, K.

doi:10.1063/1.1807014

Cited by 100 publications

(53 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In order to combine this new field of electronics with the established semiconductor technologies, spin injection from the ferromagnet into a semiconductor is essential and has already been extensively investigated [1][2][3] . The Fe 3 Si compound on GaAs has turned out to be a promising candidate of ferromagnet/semiconductor systems with its spin injection efficiency of above 2% at a temperature of 150 K and 1% at room temperature 4 . Fe 3 Si is a quasi-Heusler compound that crystallizes in the D0 3 symmetry in the chemically ordered phase with a lattice constant a =5.65Å.…”

Section: Introductionmentioning

confidence: 99%

Induced magnetism on silicon in Fe3Si quasi-Heusler compound

et al. 2012

View full text Add to dashboard Cite

Element-specific magnetic moments of epitaxially grown Fe3Si in D03 crystal symmetry were analyzed by means of x-ray absorption spectroscopy and its associated magnetic circular dichroism. To detect the weak magnetization induced at the Si sites, measurements were performed at both Si K edge and Si L3,2 edges. By band structure calculations based on either the SPR-KKR method or FLAPW with GGA, the spectroscopic features could be reproduced and provide an insight to the underlying physics. In addition, comparison of the experimental data to calculated spectra gave us the possibility to estimate the induced effective spin and orbital magnetic moment of Si in our sample, i.e. µ eff s = (−0.011 ± 0.005) µB and µ l = (−0.003 ± 0.003) µB, respectively. The sign and the order of magnitude of the tiny orbital magnetic moment has been confirmed by application of the magneto-optical sum rule.

show abstract

Section: Introductionmentioning

confidence: 99%

Induced magnetism on silicon in Fe3Si quasi-Heusler compound

et al. 2012

View full text Add to dashboard Cite

show abstract

“…These alloys have reduced magnetic anisotropy and increased resistivity when compared to pure Fe, making them interesting materials for technical applications. [1][2][3][4] In particular, special attention has been attributed to the binary Heusler alloy Fe 0.75 Si 0.25 due to its half-metallic ferromagnetic features and high Curie temperature. The magnetization relaxation of Fe 0.75 Si 0.25 /MgO(001) thin films has been studied recently.…”

mentioning

confidence: 99%

Magnetocrystalline anisotropy and Gilbert damping in iron-rich Fe1−xSixthin films

et al. 2011

View full text Add to dashboard Cite

The magnetocrystalline anisotropy of Fe 1−x Si x (0 x 0.4) epitaxial thin films on MgO(001) was studied by ferromagnetic resonance. The experimental results are in good agreement with theoretical predictions of ab initio electronic structure calculations using the fully relativistic Korringa-Kohn-Rostoker Green's function method within spin-density-functional theory. The Gilbert damping α is found to be isotropic by theory and experiment with a minimum at the composition x = 0.2.

show abstract

“…Th erefore, the introduction of a spin-selective barrier contact could be a very eff ective method for achieving high effi ciency of spin injection. [21]) as spin injection sources is a promising means of enhancing the effi ciency of spin injection [33,[58][59][60][61][62]. Kawaharazuka et al [33] reported on spin injection from the Heusler alloy Fe 3 Si into an InGaAs/GaAs QW structure, which achieved a circular polarization of 3% at 25 K. Dong et al [58] used a Heusler alloy Co 2 MnGe as a spin source to inject spin-polarized electrons into an Al 0.1 Ga 0.9 As/GaAs QW, aff ording an estimated spin polarization of 27% at 2 K. Damsgaard et al [62] reported a spin polarization of 6.4% at 5 K for a Co 2 MnGa spin aligner.…”

Section: Obstacles To Electrical Spin Injectionmentioning

confidence: 99%

“…[21]) as spin injection sources is a promising means of enhancing the effi ciency of spin injection [33,[58][59][60][61][62]. Kawaharazuka et al [33] reported on spin injection from the Heusler alloy Fe 3 Si into an InGaAs/GaAs QW structure, which achieved a circular polarization of 3% at 25 K. Dong et al [58] used a Heusler alloy Co 2 MnGe as a spin source to inject spin-polarized electrons into an Al 0.1 Ga 0.9 As/GaAs QW, aff ording an estimated spin polarization of 27% at 2 K. Damsgaard et al [62] reported a spin polarization of 6.4% at 5 K for a Co 2 MnGa spin aligner. Despite the prediction of larger spin polarization, to date the highest spin polarization reported remains relatively low, attributed variously to the properties of the interface, such as inhomogeneities, defects, strain and reduced symmetries, and the eff ect of fi nite temperature on the electronic, magnonic and phononic states at the interface [68][69][70].…”

Section: Obstacles To Electrical Spin Injectionmentioning

confidence: 99%

See 1 more Smart Citation

Electrical and optical spin injection in ferromagnet/semiconductor heterostructures

et al. 2011

View full text Add to dashboard Cite

T he operation of the rapidly expanding range of electronic devices, such as personal computers and mobile phones, is primarily based on the control of electron charge in semiconductors. Although the tremendous progress in microfabrication technologies has accelerated the miniaturization of electronic devices, the size of devices will soon encounter the fundamental physical limits of that miniaturization. Further scale reduction beyond these limits will require a radical alteration of the concept of functional devices. Control of the spin degree of freedom of an electron has brought about a new era of integration in electronics over the last ten years, and research in the fi eld of 'spintronics' is currently being pursued extensively due to the potential of this approach for the development of a new direction in electronics. Th e fi eld of spintronics spreads beyond the traditional boundaries among research fi elds, leading to interdisciplinary research that spans magnetism, semiconductors, photonics and electronics.Since 1990, a number of spin-based device concepts have been proposed. Spin-based transistors [1][2][3][4][5], spin light-emitting diodes (spin-LEDs) [6,7] and spin transfer torque memories [8,9] are typical examples. One of the device concepts is depicted in Figure 1, where the device structure consists of a ferromagnetic source electrode, a highmobility semiconductor channel, a ferromagnetic drain electrode and a gate electrode. To operate a spin-based functional device, the primary issue is the effi cient injection of spin-polarized electrons from the source ferromagnet into the semiconductor channel across the interface. Th e electron spin is then manipulated by the application of a voltage via the gate electrode [10], and the spin orientation is detected using a ferromagnetic drain electrode in a spin fi eld-eff ect transistor (FET) or from the circular polarization of light emission in a spin-LED. Although the device concept is very simple and similar to that of a conventional FET, the implementation of spin-based devices is not that straightforward: the spin degree of freedom must be handled very delicately because the spin current rapidly depolarizes at the ferromagnet/semiconductor interface and the spin information will be lost within a time scale of several hundred picoseconds, even in a semiconductor [11,12]. Th is is in clear contrast to the conservation of electron charge. Th erefore, there are still obstacles to overcome in the implementation of such spintronic devices, and for this purpose a clear understanding of not only electron spin transport processes from a ferromagnet into a semiconductor, and vice versa, but also electron spin dynamics in semiconductors, is of fundamental and technological importance.Our focus in this article is on reviewing the current status of this subject with special emphasis on electrical and optical spin injection Spin-based electronics or 'spintronics' is a rapidly expanding research area that off ers the promise of surpassing the limits of conventiona...

show abstract

Spin injection from Fe3Si into GaAs

Cited by 100 publications

References 17 publications

Induced magnetism on silicon in Fe3Si quasi-Heusler compound

Induced magnetism on silicon in Fe3Si quasi-Heusler compound

Magnetocrystalline anisotropy and Gilbert damping in iron-rich Fe1−xSixthin films

Electrical and optical spin injection in ferromagnet/semiconductor heterostructures

Contact Info

Product

Resources

About