Spin-orbit splitting in the HgTe surface quantum well

Radantsev, V. F.; Yafyasov, A. M.; Bogevolnov, V. B.; Ivankiv, I. M.

doi:10.1088/0953-8984/13/5/306

J. Phys.: Condens. Matter

2001

DOI: 10.1088/0953-8984/13/5/306

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Spin-orbit splitting in the HgTe surface quantum well

V. F. Radantsev

A. M. Yafyasov

V. B. Bogevolnov

et al.

Abstract: Two-dimensional electron gas at the anodic oxide-HgTe(110) interface is studied experimentally (by the magnetocapacitance spectroscopy method) and theoretically for carrier surface density up to 6×1012 cm-2. The measurements show the population of up to four subbands with well-resolved Rashba spin splitting in the Fourier transforms. The carrier distribution among the electric subbands agrees with the theory. However, the experimental relative differences of occupancies of spin sub-subbands (0.17-0.3) exceed t… Show more

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Cited by 5 publications

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“…For the investigation of Rashba spin-orbit coupling in MCT, most researchers employed the analysis of subband Landau levels through Shubnikov-de Haas (SdH) oscillations, 10,11 magneto-capacitance spectroscopy, 6,12,13 capacitance-voltage spectroscopy 10 or cyclotron resonance spectroscopy. 10,11 Some researchers analyzed beating-pattern in SdH oscillations.…”

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confidence: 99%

Weak antilocalization effect in high-mobility two-dimensional electron gas in an inversion layer on p-type HgCdTe

Yang

Gao

Wei

et al. 2011

Applied Physics Letters

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Magnetoconductance of a gated two-dimensional electron gas (2DEG) in the inversion layer on p-type HgCdTe crystal is investigated. At strong magnetic fields, characteristic features such as quantum Hall effect of a 2DEG with single subband occupation are observed. At weak magnetic fields, weak antilocalization effect in ballistic regime is observed. Phase coherence time and zero-field spin-splitting are extracted according to Golub's model. The temperature dependence of dephasing rate is consistent with Nyquist mechanism including both singlet and triplet channel interactions. Whether or not such topological insulator can be realized in the two-dimensional electron gas (2DEG) in the inversion layers of MCT is also an interesting problem.For the investigation of Rashba spin-orbit coupling in MCT, most researchers employed the analysis of subband Landau levels through Shubnikov-de Haas (SdH) Anodic oxidation is used to form an inversion layer on the MCT film and a gate is made upon the inversion layer after deposition of rosin a few hundred m thick as insulation layer [see inset of Fig. 1(b)]. Indium is used to facilitate Ohmic contacts.The magnetoresistance is measured in Van der Pauw configuration and the magnetic field is applied perpendicular to the film. A package of Keithley sourcemeters is used to measure magnetoresistance. All measurements are carried out in an Oxford Instruments 4 He cryogenic system with temperature ranges from 1.3 to 9.0 K. At 1.4K and zero gate-voltage, the carrier concentration is 3.0 10 15 m -2 and the mobility is 2.4 m 2 V -1 s -1 .In Fig. 1 (a) and ( The effective mass of ground electric subband is extracted by analyzing the 5 temperature dependence of the amplitude A(T) (T is temperature) of the SdH oscillations. 22 The effective mass m * we get is 0.0185m 0 (m 0 is the electron's mass in vacuum), this value is close to the effective mass of electrons at lowest subband in MCT inversion layers reported in other literatures. 23Clear weak localization effect with strong spin-orbit interaction has been observed in our sample. In Fig.2, we can see that a negative magnetoconductance is imposed on a positive magnetoconductance background. The positive magnetoconductance background is caused by weak localization effect. The negative magnetoconductance

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mentioning

confidence: 99%

Weak antilocalization effect in high-mobility two-dimensional electron gas in an inversion layer on p-type HgCdTe

Yang

Gao

Wei

et al. 2011

Applied Physics Letters

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Spin-dependent transport in nanocomposite C:co films

et al. 2009

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The magneto-transport properties of nanocomposite C:Co (15 and 40 at.% Co) thin films are investigated. The films were grown by ion beam co-sputtering on thermally oxidized silicon substrates in the temperature range from 200 to 500°C. Two major effects are reported: (i) a large anomalous Hall effect amounting to 2 lX cm, and (ii) a negative magnetoresistance. Both the field-dependent resistivity and Hall resistivity curves coincide with the rescaled magnetization curves, a finding that is consistent with spin-dependent transport. These findings suggest that C:Co nanocomposites are promising candidates for carbon-based Hall sensors and spintronic devices.

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The nonlinear Rashba effect in Hg0.77Cd0.23Te inversion layers probed by weak antilocalization analysis

Liu

Wei

et al. 2013

Journal of Applied Physics

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The Rashba spin-orbit interaction of the two-dimensional electron gas with high mobility in the inversion layer of p-type Hg0.77Cd0.23Te is investigated by magnetotransport measurements. Both the Rashba spin splitting and Rashba coefficient are extracted by analysis of the weak anti-localization effect using the Golub model. It is found that both the splitting and coefficient increase with increasing electron density (∼3.0–6.0 × 1015 m−2), i.e., with the gate voltage. A self-consistent Schrodinger-Poisson calculation is performed and suggests that the nonlinear Rashba effect caused by the weakening of interband coupling, especially at high electron density, dominates this system.

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Spin-orbit splitting in the HgTe surface quantum well

Cited by 5 publications

References 8 publications

Weak antilocalization effect in high-mobility two-dimensional electron gas in an inversion layer on p-type HgCdTe

Weak antilocalization effect in high-mobility two-dimensional electron gas in an inversion layer on p-type HgCdTe

Spin-dependent transport in nanocomposite C:co films

The nonlinear Rashba effect in Hg0.77Cd0.23Te inversion layers probed by weak antilocalization analysis

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