Spin selector based on periodic diluted-magnetic-semiconductor/nonmagnetic-barrier superlattices

Yang, Ping-Fan; Zhu, Rui; Guo, Yong

doi:10.1063/1.4926597

Cited by 2 publications

(2 citation statements)

References 33 publications

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“…ZnSe/ Zn 1−x Mn x Se 源于自旋电子学的快速发展和自旋输运现象的潜在应用, 各种微纳结构中电子自旋极化输运相关研究人们关注的越来越多. 科学家们发展出了多种调控微纳结构中电子输运特性的手段, 这些手段主要包括电调制、磁调制和光调制 [1][2][3][4][5][6][7][8] . 对于微纳结构中的电子输运特性的研究, 选取合适的半导体结构非常重要, 基于ZnSe或CdTe的II-VI族半导体量子结构被认为是非常优越的候选结构而被广泛关注.…”

Section: 引言unclassified

“…此后, 科学家从理论 [14,15] 和实验 [16][17][18] 方面对稀磁半导体结构进行了广泛研究. Zhai等 [7,8,[19][20][21] 在该领域进行了系列研究, 重点包括稀磁半导体/ 非磁垒, 半导体/稀磁半导体等异质结构中自旋输运特性. 如今, 相关结构的研究主要集中在磁阻效应、能带弯曲效应、光致发光以及零场自旋极化等方面.…”

Section: 当存在外加磁场不同自旋方向的电子所感受到的unclassified

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Spin-polarized transport properties in diluted-magnetic-semiconductor/semiconductor superlattices under light-field assisted

Li,

Zheng,

Wang

et al. 2023

Acta Phys. Sin.

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Based on the single electron effective mass approximation theory and the transfer-matrix method, the spin polarized transport properties of electrons in a diluted-magnetic-semiconductor/semiconductor superlattice are studied. The influence of a light-field and a magnetic-field on spin polarized transport and the tunneling time in the superlattice structure are discussed in more detail. The results show that, due to the sp-d electron interaction between conduction band electrons and doped Mn ions, giant Zeeman splitting occurs. It is shown that a significant spin-dependent transmission and the position and width of the resonant-transmission-band of spin-dependent electron can be manipulated by adjusting the magnetic- and light-field. Considering the light field irradiation, the resonance band of electron is deformed and broadened with the increase of the light field intensity. For the case of a strong magnetic field, the transmission coefficient (TC) in the low-energy region is almost zero when the light field is not added, but with the increase of light intensity, the TC increased significantly in the zone increases significantly, that is, a quasi-bound band appears. These features are due to the energy exchange between electrons and the light field when electrons tunnel through the superlattice structure under light irradiation. In addition, light and magnetic fields can significantly change the spin polarization of electrons. Under a certain magnetic field intensity (<i>B</i> = 2 T), the light field significantly changes the spin polarization of electrons, the main effect is that the width of the spin polarization platform narrows and oscillatory peaks are accompanied on both sides of the platform. This effect is strengthened with the increase of the light field intensity. However, when the magnetic field is stronger (<i>B</i> = 5 T), the opposite is true. These show that the spin polarization can be modulated by the light field. Finally, the tunneling time of spin-up and spin-down electrons is studied by the evolution of Gaussian wave packets in the structure. The results show that the tunneling time depends on a spin of electrons, and it can be seen that the tunneling time of the spin-down electron is shorter than that of the spin-up electron in the superlattice structure. These remarkable properties of spin polarized transport may be beneficial for the devising tunable spin filtering devices based on diluted magnetic semiconductor/semiconductor superlattice structure.

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Section: 引言unclassified

Section: 当存在外加磁场不同自旋方向的电子所感受到的unclassified

Spin-polarized transport properties in diluted-magnetic-semiconductor/semiconductor superlattices under light-field assisted

Li,

Zheng,

Wang

et al. 2023

Acta Phys. Sin.

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Spin-dependent tunneling time in periodic diluted-magnetic-semiconductor/nonmagnetic-barrier superlattices

Yang

Guo

2016

Applied Physics Letters

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We investigate the tunneling time (dwell time) in periodic diluted-magnetic-semiconductor/nonmagnetic-barrier (DMS/NB) superlattices subjected to an external magnetic field. It is found that spin-dependent resonant bands form in the spectra of dwell time, which can be effectively manipulated by not only the external magnetic field but also the geometric parameters of the system. Moreover, an intuitive semiclassical delay is defined to illustrate the behavior of the dwell time, and the former one is shown to be the result of “smoothing out” the latter one. We also find that the dwell time in diluted-magnetic-semiconductor/semiconductor superlattices behaves surprisingly different from the DMS/NB case, especially for spin-down electrons.

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Spin selector based on periodic diluted-magnetic-semiconductor/nonmagnetic-barrier superlattices

Cited by 2 publications

References 33 publications

Spin-polarized transport properties in diluted-magnetic-semiconductor/semiconductor superlattices under light-field assisted

Spin-polarized transport properties in diluted-magnetic-semiconductor/semiconductor superlattices under light-field assisted

Spin-dependent tunneling time in periodic diluted-magnetic-semiconductor/nonmagnetic-barrier superlattices

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