Spinristor: A Spin‐Filtering Memristor

Abstract

In this paper, an in silico proof of concept of a spinristor is proposed and provided; a new electronic component that combines a spin-filter and a memristor in a single molecule, useful for in-memory processing. It builds on the idea of an open-shell transition metal ion enclosed within an elliptical fullerene connected to a pair of electrodes. The spin-and electronic-polarization induced by the enclosed open-shell metallic ion leads to differential rectification of the electrons at low voltages applied between the source-drain electrodes, V SD . The position of the encapsulated ion can be switched by a high V SD which leads to a change in the direction of the rectification and the spin-filtering ratio. The system can thus be used as a switching rectifier, that is, a memristor and a spin-filter; therefore, a spinristor. The effect of different linkers on the function of the proposed device is further analyzed to show that linkers reduce the overall conductivity by an order of magnitude, but improve the spin-filtering ratio. The computations suggest that nitrile and isocyanide linkers enhance the rectification, too. To the best of the authors' knowledge, spinristor has no macroscopic counterpart in electronics, so far.

Unraveling actinide–actinide bonding in fullerene cages: a DFT versus ab initio methodological study

“…The PBE0 functional has also proven to provide good results on energetics in fullerenes with small molecules enclosed and on spin-state energy levels in Ti@C 70 . 74,75…”

“…The PBE0 functional has also proven to provide good results on energetics in fullerenes with small molecules enclosed and on spin-state energy levels in Ti@C 70 . 74,75 Let us now have a closer look at the electronic structure of Th 2 @C 80 and U 2 @C 80 . The CAS(2,6) wavefunction of the 1 Th 2 @C 80 singlet is composed of three major determinants with weights of 0.89, 0.05 and 0.05, while the triplet 3 Th 2 @C 80 wavefunction is dominated by a single determinant with the weight of 0.99.…”

Electrode-Supported Endohedral Metallofullerenes: Insights into the Confined Internal Dynamics

“…It is worth mentioning that the utilization of EMFs as molecular logic gates and memristors requires an appropriate switching barrier that ensures long-term stability. While the EMFs encapsulated by main group metals, such as the alkaline earth elements, usually present low internal diffusion barrier, the introduction of metals from groups 4 to 6 that have a strong tendency to form covalent bonds with cages provide promising solutions . Furthermore, another prototype of EMFs encapsulated by lanthanide metals is also intriguing due to their novel magnetic properties. , However, most previous investigations regarding lanthanide-based EMFs have been performed without consideration of a metal electrode.…”

Single-molecule nano-optoelectronics: insights from physics

“…For example, the orientation of polar molecules MX (M stands for alkali Specifically, for initial MX and MX@C 70 , when a weak electric field with an opposite direction of the intrinsic dipole moment of MX is applied, the energy of the local minimum decreases. Therefore, the switching barrier is reduced, leading to the rotate of polar molecules within the fullerene [470].…”