The selective deposition
of polymer thin films can be achieved via spin coating by manipulating
interfacial interactions. While this “spin dewetting”
approach sometimes generates spatial localization on topographic and
chemical patterns, the connection between material selection, process
parameters, and resulting film characteristics remains poorly understood.
Here, we demonstrate that accurate control over these parameters allows
incomplete trichlorosilane self-assembled monolayers (SAMs) to induce
spin dewetting on both homogeneous (SiO2) and heterogeneous
(Cu/SiO2 or TiN/SiO2) surfaces. Glassy polymers
undergo a sharp transition from uniform wetting to complete dewetting
depending on spin speed, solution concentration, polymer molecular
weight, and SAM chemistry. Under optimal conditions, spin dewetting
on line–space patterns results in the selective deposition
of polymer over regions not functionalized with SAM. The insights
described herein clarify the importance of different variables involved
in spin dewetting and provide access to a versatile strategy for patterning
polymeric thin films.