1987
DOI: 10.1016/0165-1633(87)90072-4
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Spray-deposited ITO-CdTe solar cells

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Cited by 22 publications
(11 citation statements)
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“…In this device, the CdTe (111) face was etched in bromine methanol prior to loading into vacuum for In 2 O 3 deposition. The CdTe crystal had a carrier concentration of 6 × 10 15 /cm 3 . The open circuit voltage of this cell remains the highest ever reported for a CdTe device.…”
Section: Introductionmentioning
confidence: 99%
“…In this device, the CdTe (111) face was etched in bromine methanol prior to loading into vacuum for In 2 O 3 deposition. The CdTe crystal had a carrier concentration of 6 × 10 15 /cm 3 . The open circuit voltage of this cell remains the highest ever reported for a CdTe device.…”
Section: Introductionmentioning
confidence: 99%
“…In SC fabrication the most utilized TCO materials are tin oxide, indium oxide and their mixture known as indium tin oxide (ITO). Thin ITO layers have been deposited onto different semiconductors to obtain SIS structures: Si (Malik et al, 1979), InP (Botnariuc et al, 1990), CdTe (Adeeb et al, 1987), GaAs (Simashkevich et al, 1992). Therefore, solar cells fabricated on the base of SIS structures have been recommended as low cost photovoltaic solar energy converters.…”
Section: The History Of Semiconductor-insulator-semiconductor Solar Cmentioning
confidence: 99%
“…ITO/CdTe (Adeeb et al, 1987) and ITO/GaAs (Simashkevich et al, 1992) structures were obtained by spray pyrolysis of ITO layers on pCdTe and pGaAs crystals. For ITO/CdTe the efficiency was 6%, for ITO/GaAs SC it did not exceed 2.5%.…”
Section: Photoelectric Properties Of Ito/inp Solar Cellsmentioning
confidence: 99%
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“…Òàêèå ñòðóêòóðû ìîãóò áûòü ïîëó÷åíû ñðàâíèòåëüíî ïðîñòûì è áîëåå íèç-êîòåìïåðàòóðíûì ìåòîäîì ïèðîëèòè÷åñêîé ïóëüâåðèçàöèè [2][3][4][5].…”
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