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Kilpeläinen, Simo; Kuitunen, Katja; Tuomisto, Filip; Slotte, Jonatan; Radamson, Henry H.; Kuznetsov, A. Yu.

doi:10.1103/physrevb.81.132103

Cited by 14 publications

(12 citation statements)

References 20 publications

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“…This is due to the ability of the E-center in SiGe to gather Ge as it becomes mobile. The effect is more significant, as expected, in the samples with the smallest Ge concentration, where the effect of the change in Ge distribution differs most from the as-grown random alloy [27].…”

Section: The E-center In Sigesupporting

confidence: 61%

“…In Ref. [27] the dissociation of the E-center in proton irradiated SiGe has been studied as a function of time and temperature. By fitting a kinetic model to the measured S-parameters a dissociation energy can be obtained.…”

Section: The E-center In Sigementioning

confidence: 99%

“…The data shown are the final points from each annealing series. The decrease in symbol size visualizes increasing annealing temperature[27].…”

mentioning

confidence: 98%

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Advances in positron annihilation spectroscopy of Si, Ge and their alloys

Slotte

Tuomisto

2012

Materials Science in Semiconductor Processing

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Section: The E-center In Sigesupporting

confidence: 61%

Section: The E-center In Sigementioning

confidence: 99%

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Advances in positron annihilation spectroscopy of Si, Ge and their alloys

Slotte

Tuomisto

2012

Materials Science in Semiconductor Processing

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“…[1][2][3][4][5] An enabling factor is the advent of high dielectric constant (high-k) dielectrics that allow the departure from the prerequisite to use native oxides such as SiO 2 in Si-based devices. [6][7][8] Si 1-x Ge x is a random alloy with the diamond structure that has one lattice site that can be occupied by either Si or Ge.…”

Section: Introductionmentioning

confidence: 99%

Vacancy-oxygen defects in p-type Si1−xGex

Sgourou

Londos

Chroneos

2014

Journal of Applied Physics

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Oxygen-vacancy defects and in particular the VO pairs (known as A-centers) are common defects in silicon (Si) with a deleterious impact upon its properties. Although oxygenvacancy defects have been extensively studied in Si there is far less information about their properties in p-type doped silicon germanium (Si 1-x Ge x ). Here we use Fourier transform infrared spectroscopy (FTIR) to determine the production and evolution of oxygen-vacancy defects in p-type Si 1-x Ge x . It was determined that the increase of Ge content affects the production and the annealing behavior of the VO defect as well as its conversion to the VO 2 defect. In particular both the VO production and the VO annealing

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“…This powerful method of detailed defect identification has been recently used for a range of materials. The identification of V In -nV N complexes in InN [71], Li-and H-related defects in ZnO [72], analysis of E-center-Ge complexes in SiGe [73], and shedding light on the vacancy clusters in SiC [74] serve as good examples. On the research in metals or alloys, the emphasis has been on studying vacancy-induced precipitation of impurities and alloy elements, such as Cu in Fe or Mg in Al [75].…”

Section: Positron Annihilation Spectroscopymentioning

confidence: 99%

Advanced techniques for characterization of ion beam modified materials

Zhang

Debelle

Boulle

et al. 2015

Current Opinion in Solid State and Materials Science

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Keywords:Rutherford backscattering spectrometry Raman spectroscopy X-ray diffraction Small-angle X-ray scattering Positron annihilation spectroscopy Ion beam modification a b s t r a c t Understanding the mechanisms of damage formation in materials irradiated with energetic ions is essential for the field of ion-beam materials modification and engineering. Utilizing incident ions, electrons, photons, and positrons, various analysis techniques, including Rutherford backscattering spectrometry (RBS), electron RBS, Raman spectroscopy, high-resolution X-ray diffraction, small-angle X-ray scattering, and positron annihilation spectroscopy, are routinely used or gaining increasing attention in characterizing ion beam modified materials. The distinctive information, recent developments, and some perspectives in these techniques are reviewed. Applications of these techniques are discussed to demonstrate their unique ability for studying ion-solid interactions and the corresponding radiation effects in modified depths ranging from a few nm to a few tens of lm, and to provide information on electronic and atomic structure of the materials, defect configuration and concentration, as well as phase stability, amorphization and recrystallization processes. Such knowledge contributes to our fundamental understanding over a wide range of extreme conditions essential for enhancing material performance and also for design and synthesis of new materials to address a broad variety of future energy applications.

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Stabilization of Ge-rich defect complexes originating fromEcenters inSi1−xGex:

Cited by 14 publications

References 20 publications

Advances in positron annihilation spectroscopy of Si, Ge and their alloys

Advances in positron annihilation spectroscopy of Si, Ge and their alloys

Vacancy-oxygen defects in p-type Si1−xGex

Advanced techniques for characterization of ion beam modified materials

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