Statistical Analysis of Mounded Surfaces: Application to the Evolution of Ultrathin Gold Film Morphology with Deposition Temperature

Siniscalco, David; Edely, Mathieu; Bardeau, Jean‐François; Delorme, Nicolas

doi:10.1021/la304621k

Cited by 24 publications

(25 citation statements)

References 46 publications

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“…[39] shows that this method leads to estimates of ξ of the same order of the average grain size estimated by inspection of microscopy images [39]. However, an accurate calculation of the average grain size is more complicated [38] and not performed here.…”

Section: B Dynamic Scaling Of Surface Roughnessmentioning

confidence: 91%

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Substrate effects and diffusion dominated roughening in Cu2O electrodeposition

Brandt

Zoldan

Stenger

et al. 2015

Journal of Applied Physics

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Cuprous oxide (Cu2O) films from 25 nm to 1500 nm were electrodeposited on n-Si(100) and Ni/n-Si(100) substrates from aqueous solution at room temperature. X-ray diffraction and transmission electron microscopy imaging show that the Cu2O structure and morphology is strongly affected by the substrate choice, with V shape and U shape columnar growth on n-Si(100) and Ni/n-Si(100), respectively. Atomic force microscopy reveals the presence of rounded grains at the surface in both cases. Anomalous and normal roughening are observed in films grown on n-Si and Ni, respectively, but estimates of scaling exponents are not conclusive. On the other hand, the distributions of local heights, roughness, and extremal heights show good agreement with those of the fourth order linear stochastic equation of Mullins and Herring (MH). Thus, surface dynamics in both systems is dominated by diffusion of adsorbed molecules, with no large scale effect of possible inhomogeneities in mass flux from the solution or in reaction and adsorption rates. In growth on n-Si substrates, the noise amplitude of the MH equation increases in time as t 0.8 , while the coefficient of the curvaturerelated term is time-independent.Step edge energy barriers restrict the mass flux across grain boundaries, thus a broad size distribution of initial grains leads to coarsening of the larger ones. This explains their V shape in the thickest films and establishes a connection with the anomalous roughening. These effects are reduced in films grown on Ni/n-Si, which initially have much larger grains with narrower size distributions and, consequently, smaller fluctuations in coarse grained growth rates. Thus, despite the relevance of electrochemical conditions for Cu2O films to grow and their influence on crystallographic orientation, large scale surface features are determined by physical properties of the material and its interactions with the substrate, with a universal microscopic dynamics similar to vapor deposition. arXiv:1509.04787v1 [cond-mat.mtrl-sci] 16 Sep 2015

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Section: B Dynamic Scaling Of Surface Roughnessmentioning

confidence: 91%

“…5c and 5e as a function of the distance l, for several thicknesses. A reliable estimate of the correlation length ξ is the minima of Γ (l, t) [37,38], which is shown in Figs. 5d and 5f as a function of the thickness H.…”

Section: B Dynamic Scaling Of Surface Roughnessmentioning

confidence: 99%

Substrate effects and diffusion dominated roughening in Cu2O electrodeposition

Brandt

Zoldan

Stenger

et al. 2015

Journal of Applied Physics

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“…where the overbars denote a spatial average in each box position (root-mean square height fluctuation inside the square box at a given position) and the angular brackets denote a configurational average over all positions of the box (which glides parallel to the substrate) and over different configurations of the deposit at time t. The autocorrelation function [43,44] is defined as…”

Section: Definition Of Basic Quantitiesmentioning

confidence: 99%

Crossover from compact to branched films in electrodeposition with surface diffusion

2017

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We study a model for thin film electrodeposition in which instability development by preferential adsorption and reduction of cations at surface peaks competes with surface relaxation by diffusion of the adsorbates. The model considers cations moving in a supported electrolyte, adsorption and reduction when they reach the film surface, and consequent production of mobile particles that execute activated surface diffusion, which is represented by a sequence of random hops to neighboring lattice sites with a maximum of G hop attempts (G≫1), a detachment probability ε<1 per neighboring particle, and a no-desorption condition. Computer simulations show the formation of a compact wetting layer followed by the growth of branched deposits. The maximal thickness z_{c} of that layer increases with G but is weakly affected by ε. A scaling approach describes the crossover from smooth film growth to unstable growth and predicts z_{c}∼G^{γ}, with γ=1/[2(1-ν)]≈0.43, where ν≈0.30 is the inverse of the dynamical exponent of the Villain-Lai-Das Sarma equation that describes the initial roughening. Using previous results for related deposition models, the thickness z_{c} can be predicted as a function of an activation energy for terrace surface diffusion and the temperature, and the small effects of the parameter ε are justified. These predictions are confirmed by the numerical results with good accuracy. We discuss possible applications, with a particular focus on the growth of multifuncional structures with stacking layers of different porosity.

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“…The mound size is estimated from the first minima of the slope-slope correlation function Γ(l, t) ≡ ∇h(x + l, t)∇h(x, t) [14], shown in Fig. 2a for several growth times.…”

Section: Figures 1a and 1bmentioning

confidence: 99%

Universal fluctuations in the growth of semiconductor thin films

et al. 2014

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Scaling of surface fluctuations of polycrystalline CdTe/Si(100) films grown by hot wall epitaxy are studied. The growth exponent of surface roughness and the dynamic exponent of the auto-correlation function in the mound growth regime agree with the values of the Kardar-Parisi-Zhang (KPZ) class. The scaled distributions of heights, local roughness, and extremal heights show remarkable collapse with those of the KPZ class, giving the first experimental observation of KPZ distributions in $2+1$ dimensions. Deviations from KPZ values in the long-time estimates of dynamic and roughness exponents are explained by spurious effects of multi-peaked coalescing mounds and by effects of grain shapes. Thus, this scheme for investigating universality classes of growing films advances over the simple comparison of scaling exponents.Comment: 5 pages, 3 figure

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Statistical Analysis of Mounded Surfaces: Application to the Evolution of Ultrathin Gold Film Morphology with Deposition Temperature

Cited by 24 publications

References 46 publications

Substrate effects and diffusion dominated roughening in Cu2O electrodeposition

Substrate effects and diffusion dominated roughening in Cu2O electrodeposition

Crossover from compact to branched films in electrodeposition with surface diffusion

Universal fluctuations in the growth of semiconductor thin films

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