Steady-state and transient electron transport within the wide energy gap compound semiconductors gallium nitride and zinc oxide: an updated and critical review

Hadi, Walid A.; Shur, M. S.; O’Leary, Stephen K.

doi:10.1007/s10854-014-2226-2

Cited by 31 publications

(24 citation statements)

References 178 publications

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“…[199] for the case of wurtzite InN, and Hadi et al [196] for the case of wurtzite ZnO. This table has been modified from Table 1 of O'Leary et al [110] and Table 1 of Hadi et al [204]. Copyright permission was obtained from Springer a Parameters from O'Leary et al [110] b Parameters from O'Leary et al [110] c Parameters from Hadi et al [199] d Parameters from Hadi et al [196] energy gap.…”

Section: A Critical Comparison With Other Compound Semiconductorsmentioning

confidence: 99%

“…Copyright permission was obtained from Springer a Parameters from O'Leary et al [110] b Parameters from O'Leary et al [110] c Parameters from Hadi et al [199] d Parameters from Hadi et al [196] energy gap. The material and band structural parameters, used for this critical comparative analysis, are drawn from Tables 1 and 2, Adachi [15], Hadi et al [204], and Sze and Ng [227]. The material and band structural parameters, corresponding to these other compound semiconductors, are tabulated in Table 3 [228].…”

Section: A Critical Comparison With Other Compound Semiconductorsmentioning

confidence: 99%

“…In this case, however, there is a considerable amount of scatter about the trend; this scatter is sufficiently great that a linear least-squares fit, while indicative of a general trend, is not statistically significant. The polar optical phonon energy plays a critical role in The material and band structural parameters, used for this critical comparative analysis, are drawn from Tables 1 and 2, Adachi [15], Hadi et al [204], and Sze and Ng [227]. This table is the same as Table 3 of Hadi et al [204].…”

Section: A Critical Comparison With Other Compound Semiconductorsmentioning

confidence: 99%

“…The polar optical phonon energy plays a critical role in The material and band structural parameters, used for this critical comparative analysis, are drawn from Tables 1 and 2, Adachi [15], Hadi et al [204], and Sze and Ng [227]. This table is the same as Table 3 of Hadi et al [204]. Copyright permission was obtained from Springer The energy gap, E g , at 300 K, for a number of elemental and compound semiconductors.…”

Section: A Critical Comparison With Other Compound Semiconductorsmentioning

confidence: 99%

“…Then, in 2014, we reviewed what was then known about the electron transport within the wurtzite and zinc-blende phases of GaN and the wurtzite phase of ZnO [204]. For this special issue, published in honor of the 25th Anniversary of this journal, we thought that it would be appropriate to report on the current status of understanding on the nature of the electron transport within the wurtzite phases of GaN, AlN, InN, and ZnO, providing a 2015 perspective on this important subject matter.…”

Section: Introductionmentioning

confidence: 99%

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A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review

Siddiqua

Hadi

Shur

et al. 2015

J Mater Sci: Mater Electron

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Wide energy gap semiconductors are broadly recognized as promising materials for novel electronic and optoelectronic device applications. As informed device design requires a firm grasp of the material properties of the underlying electronic materials, the electron transport that occurs within the wide energy gap semiconductors has been the focus of considerable study over the years. In an effort to provide some perspective on this rapidly evolving and burgeoning field of research, we review analyzes of the electron transport within some wide energy gap semiconductors of current interest in this paper. In order to narrow the scope of this review, we will primarily focus on the electron transport that occurs within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide in this review, these materials being of great current interest to the wide energy gap semiconductor community; indium nitride, while not a wide energy gap semiconductor in of itself, is included as it is often alloyed with other wide energy gap semiconductors, the resultant alloys being wide energy gap semiconductors themselves. The electron transport that occurs within zinc-blende gallium arsenide is also considered, albeit primarily for bench-marking purposes. Most of our discussion will focus on results obtained from our ensemble semi-classical three-valley Monte Carlo simulations of the electron transport within these materials, our results conforming with state-of-the-art wide energy gap semiconductor orthodoxy. A brief tutorial on the Monte Carlo electron transport simulation approach, this approach being used to generate the results presented herein, is also provided. Steady-state and transient electron transport results are presented. The evolution of the field, and a survey of the current literature, are also featured. We conclude our review by presenting some recent developments on the electron transport within these materials.

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Section: A Critical Comparison With Other Compound Semiconductorsmentioning

confidence: 99%

Section: A Critical Comparison With Other Compound Semiconductorsmentioning

confidence: 99%

Section: A Critical Comparison With Other Compound Semiconductorsmentioning

confidence: 99%

Section: A Critical Comparison With Other Compound Semiconductorsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review

Siddiqua

Hadi

Shur

et al. 2015

J Mater Sci: Mater Electron

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Mechanical Properties of Nanocrystalline and Amorphous Gallium Oxide Thin Films

Battu

Ramana

2018

Adv Eng Mater

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Nanocrystalline and amorphous Ga2O3 films (%200 nm) with variable structural quality are produced by sputter-deposition by varying the substrate temperature (T s ¼ 25-700 C). The effect of T s is significant on the microstructure and mechanical behavior of Ga 2 O 3 films. The variation in mechanical behavior studied by nano-indentation and nano-scratch testing reveal distinct trends, which are directly related to the structure and morphology of Ga 2 O 3 films. All the Ga 2 O 3 films deposited at T s < 500 C are amorphous; the amorphous-to-crystalline transformation occurs at T s ¼ 500 C. Ga 2 O 3 films deposited at T s ! 500 C are nanocrystalline, β-phase. The corresponding mechanical characteristics, namely the hardness (H) and elastic modulus (E r ), show a strong correlation with structural characteristics. The H and E r increases from 17 to 27 GPa and 250 to 290 GPa, respectively, with increasing T s from 25 to 700 C. The plasticity index, which is the ratio of H/E r , is almost constant for the Ga 2 O 3 films. The strain-rate sensitivity measurements performed to determine the applicability in practical applications indicate the best performance of size controlled, nanocrystalline Ga 2 O 3 films, which can be mechanically regarded as nano-composite structures. The mechanical characteristics, scratch behavior, and strain rate sensitivity indicate the role of microstructure on the mechanical performance of Ga 2 O 3 films.Gallium oxide exhibits polymorphism. The α, β, γ, δ, and e phases of Ga 2 O 3 are widely known. [16,18,[25][26][27] Among these polymorphs, monoclinic β-Ga 2 O 3 is thermally stable with a band gap of %5 eV and high breakdown field 8 MV cm À1 . [28] β-Ga 2 O 3 exhibits n-type conductivity, which is related to donor centers involving oxygen vacancies and/or impurities. The high thermal stability of β-Ga 2 O 3 (melting point %1900 C) is quite useful in the design and development of high-temperature chemical sensors, which can be readily used in automotive industry and power plants. [2] Furthermore, the high-temperature stability coupled with deep ultraviolet transparency makes Ga 2 O 3 based materials as the potential candidates for chemical sensors in extreme environments and transparent electrodes in UV optoelectronics, photonics, and thin-film transistors. [29][30][31] However, in all these applications, fundamental understanding of the structure, thermodynamic conditions, and mechanical characteristics is the key to achieving enhanced device performance.

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A Modeling Study of Electron Transport in GaN/AlGaN Superlattices Using Monte Carlo Simulation

Bai,

Rorison

2023

Physica Status Solidi (b)

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Electron transport in superlattices (SLs) is analyzed using a single‐particle Monte Carlo (MC) method. This study includes the band structure of GaN, AlN, and their alloys, utilizing a single‐electron MC approach and a three‐band model. It explores how intervalley (IV) and electron–polar longitudinal optical phonon (PLOP) scatterings influence electron velocity. A single non‐parabolic band approximation is effectively used in SL modeling, as the miniband's energy width limits electron kinetic energy, reducing IV scattering. The energy band structure of the SL is calculated using the Schrödinger equation and a Poisson solver, incorporating a single‐band model to determine the Fermi energy and characteristics of the SL miniband. Miniband dispersion is evaluated using an effective mass approximation at low energies and a non‐parabolicity factor at higher energies. The MC method is then applied to study electron transport within the miniband, revealing that for SLs with low Al content and short periods, electron behavior resembles that in bulk GaN. It is observed that negative differential mobility can occur, attributed to electron–PLOP scattering and non‐parabolicity. This approach offers a quick and effective way to research high‐field electron transport in n‐doped SLs, aiding in device design.

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Steady-state and transient electron transport within the wide energy gap compound semiconductors gallium nitride and zinc oxide: an updated and critical review

Cited by 31 publications

References 178 publications

A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review

A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review

Mechanical Properties of Nanocrystalline and Amorphous Gallium Oxide Thin Films

A Modeling Study of Electron Transport in GaN/AlGaN Superlattices Using Monte Carlo Simulation

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