Step-density variations and reflection high-energy electron-diffraction intensity oscillations during epitaxial growth on vicinal GaAs(001)

Shitara, Tetsuya; Vvedensky, Dimitri D.; Wilby, Mark Richard; Zhang, J.; Neave, J.H.; Joyce, B. A.

doi:10.1103/physrevb.46.6815

Cited by 238 publications

(59 citation statements)

References 37 publications

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“…For example, surface step density is known to directly affect the overall surface diffusion, by providing stable sites for adatom incorporation or extra energy barriers to adatom movement on the surface. 29 We thus investigated the role of vicinal surfaces on morphological instabilities, keeping in mind the TEM results presented in Fig. 2 as well as in literature; Peiró et al 30,31 have shown that vicinal substrates can enhance the degree of compositional modulation and surface undulations on InAlAs/InP and InGaAs/InP sys-FIG.…”

Section: Resultsmentioning

confidence: 99%

Compositional modulation and surface stability in InGaP films: Understanding and controlling surface properties

Bortoleto

Gutiérrez

Cotta

et al. 2007

Journal of Applied Physics

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We investigate the formation of compositional modulation and atomic ordering in InGaP films. Such bulk properties-as well as surface morphologies-present a strong dependence on growth parameters, mainly the V/III ratio. Our results indicate the importance of surface diffusion and, particularly, surface reconstruction for these processes. Most importantly from the application point of view, we show that the compositional modulation is not necessarily coupled to the surface instabilities, so that smooth InGaP films with periodic compositional variation could be obtained. This opens a new route for the generation of templates for quantum dot positioning and three-dimensional arrays of nanostructures.

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Section: Resultsmentioning

confidence: 99%

Compositional modulation and surface stability in InGaP films: Understanding and controlling surface properties

Bortoleto

Gutiérrez

Cotta

et al. 2007

Journal of Applied Physics

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“…Analogous assumptions are made for modelling molecular-beam epitaxy of III-V systems. 21 For each of the group-III species comprising the alloy, the evolution of the free-atom density n i on each facet (i) can be determined through the reaction-diffusion equation…”

Section: Theorymentioning

confidence: 99%

Indium segregation during III–V quantum wire and quantum dot formation on patterned substrates

Moroni

Dimastrodonato

Chung

et al. 2015

Journal of Applied Physics

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We report a model for metalorganic vapor-phase epitaxy on non-planar substrates, specifically V-grooves and pyramidal recesses, which we apply to the growth of InGaAs nanostructures. This model-based on a set of coupled reaction-diffusion equations, one for each facet in the systemaccounts for the facet-dependence of all kinetic processes (e.g., precursor decomposition, adatom diffusion, and adatom lifetimes) and has been previously applied to account for the temperature-, concentration-, and temporal-dependence of AlGaAs nanostructures on GaAs (111)B surfaces with V-grooves and pyramidal recesses. In the present study, the growth of In 0.12 Ga 0.88 As quantum wires at the bottom of V-grooves is used to determine a set of optimized kinetic parameters. Based on these parameters, we have modeled the growth of In 0.25 Ga 0.75 As nanostructures formed in pyramidal site-controlled quantum-dot systems, successfully producing a qualitative explanation for the temperature-dependence of their optical properties, which have been reported in previous studies. Finally, we present scanning electron and cross-sectional atomic force microscopy images which show previously unreported facetting at the bottom of the pyramidal recesses that allow quantum dot formation. V C 2015 AIP Publishing LLC.[http://dx

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“…where a is the jump length, taken as the nearest neighbour lattice spacing, $ 10 13 s À1 the attempt frequency, E D i the energy barrier to hopping, k B is Boltzmann's constant, and T the absolute temperature [25].…”

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confidence: 99%

Self-Limiting Evolution of Seeded Quantum Wires and Dots on Patterned Substrates

2012

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Step-density variations and reflection high-energy electron-diffraction intensity oscillations during epitaxial growth on vicinal GaAs(001)

Cited by 238 publications

References 37 publications

Compositional modulation and surface stability in InGaP films: Understanding and controlling surface properties

Compositional modulation and surface stability in InGaP films: Understanding and controlling surface properties

Indium segregation during III–V quantum wire and quantum dot formation on patterned substrates

Self-Limiting Evolution of Seeded Quantum Wires and Dots on Patterned Substrates

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