Stoichiometric Effect on Optoelectronic Properties of Composition‐Tunable CdS1−xSex Nanowires

Zhang, Qi; Xing, Xiaonan; Zhou, Xing; Xiong, Xiaoli; Zhai, Tianyou

doi:10.1002/adom.201600877

Cited by 14 publications

(14 citation statements)

References 50 publications

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“…CVD shows a great potential to grow large-area materials with a good crystallinity by exactly tuning the precursors . Thereby, in this work, BP nanowires were synthesized via a vapor deposition route, as schematically shown in Figure a.…”

Section: Resultsmentioning

confidence: 99%

Controllable Carrier Type in Boron Phosphide Nanowires Toward Homostructural Optoelectronic Devices

Ding

Zhang

et al. 2018

ACS Appl. Mater. Interfaces

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The p-n junction is one important and fundamental building block of the optoelectronic age. However, electrons and holes will be severely scattered in heterostructures led by the grain boundary at the alloy interface between two dissimilar semiconductors. In this work, we present boron phosphide (BP) nanowires with artificially controllable carrier type for the fabrication of homojunctions via adjusting borane/phosphine ratio during the deposition process, both prove high crystallization with fewer impurities. The homojunctions that consist of n-type and p-type BP nanowires show apparent photovoltaic effect [external quantum efficiency ≈ 10% under a ∼0.4 pW light @ 600 nm] and the quenched photoluminescence within the junction area, which indicates the effective separation and transfer of photogenerated charge carriers at the interface. The achievement of controllable carrier type implemented in the same material ushers in a frontier for the design of nanoscale homojunctions toward advanced optoelectronic devices.

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Section: Resultsmentioning

confidence: 99%

Controllable Carrier Type in Boron Phosphide Nanowires Toward Homostructural Optoelectronic Devices

Ding

Zhang

et al. 2018

ACS Appl. Mater. Interfaces

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“…In the last decades there has been a growing interest for their ternary solid solutions, CdS 1−x Se x , since the variation of the Se content offers the possibility to gradually tune the band gap between those of the CdS and CdSe end-members [1][2][3][4]. Besides their recent use mainly as optoelectronic and nonlinear optical devices as well as cut-off filters [5][6][7][8][9], CdS 1−x Se x have found applications as artists' pigments during the twentieth century [10]. Cadmium red is the name used for denoting this class of pigments.…”

Section: Introductionmentioning

confidence: 99%

Deeper insights into the photoluminescence properties and (photo)chemical reactivity of cadmium red (CdS1−xSex) paints in renowned twentieth century paintings by state-of-the-art investigations at multiple length scales

Monico

Rosi²,

Vivani

et al. 2022

Eur. Phys. J. Plus

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Cadmium red is the name used for denoting a class of twentieth century artists’ pigments described by the general formula CdS1−xSex. For their vibrant hues and excellent covering power, a number of renowned modern and contemporary painters, including Jackson Pollock, often used cadmium reds. As direct band gap semiconductors, CdS1−xSex compounds undergo direct radiative recombination (with emissions from the green to orange region) and radiative deactivation from intragap trapping states due to crystal defects, which give rise to two peculiar red-NIR emissions, known as deep level emissions (DLEs). The positions of the DLEs mainly depend on the Se content of CdS1−xSex; thus, photoluminescence and diffuse reflectance vis–NIR spectroscopy have been profitably used for the non-invasive identification of different cadmium red varieties in artworks over the last decade. Systematic knowledge is however currently lacking on what are the parameters related to intrinsic crystal defects of CdS1−xSex and environmental factors influencing the spectral properties of DLEs as well as on the overall (photo)chemical reactivity of cadmium reds in paint matrixes. Here, we present the application of a novel multi-length scale and multi-method approach to deepen insights into the photoluminescence properties and (photo)chemical reactivity of cadmium reds in oil paintings by combining both well established and new non-invasive/non-destructive analytical techniques, including macro-scale vis–NIR and vibrational spectroscopies and micro-/nano-scale advanced electron microscopy mapping and X-ray methods employing synchrotron radiation and conventional sources. Macro-scale vis–NIR spectroscopy data obtained from the in situ non-invasive analysis of nine masterpieces by Gerardo Dottori, Jackson Pollock and Nicolas de Staël allowed classifying the CdS1−xSex-paints in three groups, according to the relative intensity of the two DLE bands. These outcomes, combined with results from micro-/nano-scale electron microscopy mapping and X-ray analysis of a set of CdS1−xSex powders and artificially aged paint mock-ups, indicated that the relative intensity of DLEs is not affected by the morphology, microstructure and local atomic environment of the pigment particles but it is influenced by the presence of moisture. Furthermore, the extensive study of artificially aged oil paint mock-ups permitted us to provide first evidence of the tendency of cadmium reds toward photo-degradation and to establish that the conversion of CdS1−xSex to CdSO4 and/or oxalates is triggered by the oil binding medium and moisture level and depends on the Se content. Based on these findings, we could interpret the localized presence of CdSO4 and cadmium oxalate as alteration products of the original cadmium red paints in two paintings by Pollock. Graphical abstract

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“…Cadmium sulfide (CdS) is a physiochemically interesting intermediate direct bandgap (2.4 eV) semiconductor with speedy response, low work function, high photosensitivity, large refractive index, and exceptional chemical and thermal stability. Therefore, it is a fascinating and potential candidate for selfpowered photodetectors [13][14][15][16][17][18][19][20][21][22][23] . For instance, Dai et al reported FPSD composed of p-Si/n-CdS nanowires heterostructure, which respond beyond the bandgap limitation with fast response speed at zero bias 24 .…”

Section: Introductionmentioning

confidence: 99%

CdS nanobelt-based self-powered flexible photodetectors with high photosensitivity

Nawaz

Zhou

et al. 2021

Mater. Adv.

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Stoichiometric Effect on Optoelectronic Properties of Composition‐Tunable CdS₁₋_xSe_x Nanowires

Cited by 14 publications

References 50 publications

Controllable Carrier Type in Boron Phosphide Nanowires Toward Homostructural Optoelectronic Devices

Controllable Carrier Type in Boron Phosphide Nanowires Toward Homostructural Optoelectronic Devices

Deeper insights into the photoluminescence properties and (photo)chemical reactivity of cadmium red (CdS1−xSex) paints in renowned twentieth century paintings by state-of-the-art investigations at multiple length scales

CdS nanobelt-based self-powered flexible photodetectors with high photosensitivity

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