Strain and anisotropy effects studied in InAs/GaAs(2 2 1) quantum dashes by Raman spectroscopy

Espinosa-Vega, L.I.; Eugenio-López, E.; Gutiérrez-Hernández, José Manuel; Gorbatchev, A.Yu.; Shimomura, S.; Méndez-García, V.H.

doi:10.1016/j.jcrysgro.2017.04.004

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“…Raman spectroscopy is a powerful tool for studying structural variations of GaAs structures [ 23 , 24 ]. Espinosa-Vega et al [ 25 ] noted that small changes of Raman modes indicate the perfection of GaAs structures. The ratio of phonons could be an indicator of GaAs structural composition [ 26 ].…”

Section: Resultsmentioning

confidence: 99%

Characterization of GaAs Solar Cells under Supercontinuum Long-Time Illumination

et al. 2021

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This work is dedicated to the description of the degradation of GaAs solar cells under continuous laser irradiation. Constant and strong exposure of the solar cell was performed over two months. Time-dependent electrical characteristics are presented. The structure of the solar cells was studied at the first and last stages of degradation test. The data from Raman spectroscopy, reflectometry, and secondary ion mass spectrometry confirm displacement of titanium and aluminum atoms. X-ray photoelectron spectroscopy showed a slight redistribution of oxygen bonds in the anti-corrosion coating.

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