Strain-induced thermoelectric performance enhancement of monolayer ZrSe<sub>2</sub>

Qin, Dan; Ge, Xu-Jin; Ding, Guangqian; Gao, Guoying; Lü, Jing-Tao

doi:10.1039/c7ra08828k

Cited by 75 publications

(48 citation statements)

References 54 publications

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Section: Thermal Properties In 2d Semiconductorsmentioning

confidence: 85%

“…For other members having semiconducting property, like group IVB and VIII transition metal based TMDs, a much lower thermal conductivity has been theoretically shown, which is beneficial for TE applications. [60] Typically, the thermal conductivity of the TMDs from these groups has a similar dependence on the chalcogen atom species and increases from selenides to sulfides. The thermal conductivity of monolayer ZrSe 2 and HfSe 2 at room temperature is 1.2 and 1.8 W m −1 K −1 , [61] respectively, which is lower than that of monolayer ZrS 2 , of around Adv.…”

Section: Transition Metal Dichalcogenidesmentioning

confidence: 99%

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Thermal Transport in 2D Semiconductors—Considerations for Device Applications

Zhao

Cai

Zhang

et al. 2019

Adv Funct Materials

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The discovery of graphene has stimulated the search for and investigations into other 2D materials because of the rich physics and unusual properties exhibited by many of these layered materials. Transition metal dichalcogenides (TMDs), black phosphorus, and SnSe among many others, have emerged to show highly tunable physical and chemical properties that can be exploited in a whole host of promising applications. Alongside the novel electronic and optical properties of such 2D semiconductors, their thermal transport properties have also attracted substantial attention. Here, a comprehensive review of the unique thermal transport properties of various emerging 2D semiconductors is provided, including TMDs, black‐ and blue‐phosphorene among others, and the different mechanisms underlying their thermal conductivity characteristics. The focus is placed on the phonon‐related phenomena and issues encountered in various applications based on 2D semiconductor materials and their heterostructures, including thermoelectric power generation and electron–phonon coupling effect in photoelectric and thermal transistor devices. A thorough understanding of phonon transport physics in 2D semiconductor materials to inform thermal management of next‐generation nanoelectronic devices is comprehensively presented along with strategies for controlling heat energy transport and conversion.

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Section: Thermal Properties In 2d Semiconductorsmentioning

confidence: 85%

Section: Transition Metal Dichalcogenidesmentioning

confidence: 99%

Thermal Transport in 2D Semiconductors—Considerations for Device Applications

Zhao

Cai

Zhang

et al. 2019

Adv Funct Materials

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“…2D group IVB materials exhibited excellent and unique thermal properties, especially under strain, which quite meet the requirements for thermoelectric devices. Therefore, 2D IVB materials have been widely explored and have made great progress in thermoelectric devices . However, the recent reports about 2D group IVB materials for thermoelectric devices are still limited to in theory works or working at low temperature, more works are necessary to boost the performance of thermoelectric devices based on 2D group IVB materials.…”

Section: Device Applicationsmentioning

confidence: 99%

2D Group IVB Transition Metal Dichalcogenides

Yan

Gong

Wangyang

et al. 2018

Adv Funct Materials

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Semiconductor technology is currently impaired by the surface dangling bond of materials, which introduces scattering and interface traps. 2D materials, especially transition metal dichalcogenides (TMDs) with different main groups, have settled this issue by utilizing unique atomically smooth surfaces and van der Waals (vdW) structures. Over the past few decades, many processes for exploring new materials, manipulating physical properties, and synthesizing single crystals have been developed. Among these 2D materials, group IVB TMDs are distinguished for their splendid physical properties, including ultrahigh mobility, charge density wave, superconducting transitions, etc. Here, the recent advances in group IVB TMDs are reviewed, which offer easy access to next generation nano-, opto-, thermal-electronic, energy storage and conversion applications. Both the advantages and challenges of these studies are summarized to further clarify existing problems.such as ZrSe 2 is up to 8000 µA µm −1 , which is 10 3 times higher than that of MoS 2 . [11] Group IVB TMDs are also promising thermoelectric materials for their enhanced thermoelectric performance with a high power factor such as TiS 2 . [12][13][14][15][16] These features indicate the great potential of group IVB TMDs for adoption into electronics. In addition, group IVB TMDs show fascinating electrochemical performances as hold materials [17][18][19] or electrodes [20,21] in catalysis [22,23] and batteries [24,25] (Figure 1). A breakthrough may be introduced in nanoelectronic and energy fields for ultrahigh performances and nontoxicity of 2D group IVB TMDs.In this review, we focus on the electronic structures of 1T-phase group IVB TMDs, the abundant properties of group IVB TMDs, and their applications in electronic devices. In particular, we start with the unique crystal structures and calculated electronic structures of 2D group IVB dichalcogenides. Then, the great properties and the current studies in electronic devices are reviewed with an emphasis on recently reported transistor and photodetectors based on group IVB TMD nanosheets. In the third part, the synthesis of group IVBs nanostructures is described. We review the current approaches for the isolation of ultrathin sheets and analyze the advantages and drawbacks of various preparation methods. At last, we present the challenges and future prospects of group IVB TMDs. Crystal and Electronic StructuresThe electronic structures of 2D TMDs strongly depend on their crystal structures and d-electron counts. Another crucial feature is the partially filled d bands of transition metals. Bulk TMDs are composed of ordered stacking monolayers connected by the weak van der Waals (vdW) interaction. This kind of layered material exists multifarious in polymorphs and commonly crystallize into three different structures in 1T, 2H, and 3R phases. For group IVB TMDs, 1T phase is more stable than 2H phase in reversal of group VIB TMDs due to their lower formation energies. [23] Figure 2a,b depicts the two typical structures o...

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“…Under excited at 395 nm, all phosphors presented a series of characteristic emissions, which located at 590 nm ( 5 D 0 / 7 F 1 transition), 611 nm ( 5 D 0 / 7 F 2 transition), 656 nm ( 5 D 0 / 7 F 3 transition), and 705 nm ( 5 D 0 / 7 F 4 transition). 11,[52][53][54][55][56] However, with doping Lu 3+ ions into BEB, the PL intensity increased until x ¼ 0.3 (the intensity of BEB:0.3Lu 3+ was almost 1.34 times of that of BEB), and then dropped rashly aer doping Lu 3+ ions heavily. The results can be explained by the concentration quenching of Eu 3+ ions.…”

Section: Luminescence Properties Of Beb:xlu 3+mentioning

confidence: 99%

Lu³⁺ doping induced photoluminescence enhancement in novel high-efficiency Ba₃Eu(BO₃)₃ red phosphors for near-UV-excited warm-white LEDs

Annadurai

Liang

et al. 2018

RSC Adv.

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doped BEB red phosphors were successfully synthesized by a hightemperature solid-state reaction method. X-ray diffraction (XRD) patterns, excitation and emission spectra, decay lifetimes, CIE coordinates, internal quantum efficiency, and thermal stability of these phosphors were systematically studied. Under 395 nm excitation, these phosphors exhibited highbrightness red emissions centred at 611 nm. In addition, it was found that doping appropriate amounts of Lu 3+ ions into BEB phosphors can improve their photoluminescence intensity and internal quantum efficiency. The integrated emission intensity of BEB:0.3Lu 3+ phosphor was about 1.34 times that of BEB phosphor. Compared with commercial red phosphor Y 2 O 2 S:Eu 3+ , BEB:0.3Lu 3+ phosphor showed better color purity (91.4%) and higher emission intensity (about 3.25 times). Surprisingly, the BEB:0.3Lu 3+ phosphor had a high internal quantum efficiency of almost 87%, which was higher than that of 83% for BEB phosphors. Meanwhile, the BEB:0.3Lu 3+ phosphors also exhibited good thermal stability with activation energy around 0.14 eV, and the integrated emission intensity at 423 K remained about 52% of that at 303 K. Finally, by using commercial BaMgAl 10 O 17 :Eu 2+ blue phosphors, commercial (Ba,Sr) 2 SiO 4 :Eu 2+ green phosphors, as-prepared BEB:0.3Lu 3+ red phosphors and a 395 nm nearultraviolet-emitting light-emitting diode (LED) chip, a prototype warm white LED device was fabricated, which showed good color rendering index (CRI ¼ 84.7) and low correlated color temperature (CCT ¼ 3377 K).

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Strain-induced thermoelectric performance enhancement of monolayer ZrSe₂

Cited by 75 publications

References 54 publications

Thermal Transport in 2D Semiconductors—Considerations for Device Applications

Thermal Transport in 2D Semiconductors—Considerations for Device Applications

2D Group IVB Transition Metal Dichalcogenides

Lu³⁺ doping induced photoluminescence enhancement in novel high-efficiency Ba₃Eu(BO₃)₃ red phosphors for near-UV-excited warm-white LEDs

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Strain-induced thermoelectric performance enhancement of monolayer ZrSe2

Cited by 75 publications

References 54 publications

Thermal Transport in 2D Semiconductors—Considerations for Device Applications

Thermal Transport in 2D Semiconductors—Considerations for Device Applications

2D Group IVB Transition Metal Dichalcogenides

Lu3+ doping induced photoluminescence enhancement in novel high-efficiency Ba3Eu(BO3)3 red phosphors for near-UV-excited warm-white LEDs

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Product

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Strain-induced thermoelectric performance enhancement of monolayer ZrSe₂

Lu³⁺ doping induced photoluminescence enhancement in novel high-efficiency Ba₃Eu(BO₃)₃ red phosphors for near-UV-excited warm-white LEDs