Strategies for Post‐Synthesis Alignment and Immobilization of Carbon Nanotubes

Druzhinina, Tamara S.; Hoeppener, Stephanie; Schubert, Ulrich S.

doi:10.1002/adma.201003509

Cited by 41 publications

(24 citation statements)

References 169 publications

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“…Two major strategies for producing CNT arrays include post-synthesis assembly 254–255 and the aligned growth. 206,256–258 Post synthesis assembly approaches, which are similar to the assembly methods for SiNWs, include flow directed alignment, 259–265 Langmuir–Blodgett assembly, 266–267 electric field 268–270 and magnetic field 271–274 directed alignment, mechanical shearing, 275–280 or blown bubble film techniques.…”

Section: Nanostructure Building Blocks and Nanotransistorsmentioning

confidence: 99%

Nano-Bioelectronics

2015

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Nano-bioelectronics represents a rapidly expanding interdisciplinary field that combines nanomaterials with biology and electronics, and in so doing, offers the potentials to overcome existing challenges in bioelectronics. In particular, shrinking electronic transducer dimensions to the nanoscale and making their properties appear more biological can yield significant improvements in the sensitivity and biocompatibility, and thereby open up opportunities in fundamental biology and healthcare. This review emphasizes recent advances in nano-bioelectronics enabled with semiconductor nanostructures, including silicon nanowires (SiNWs), carbon nanotubes (CNTs), and graphene. First, the synthesis and electrical properties of these nanomaterials are discussed in the context of bioelectronics. Second, affinity-based nano-bioelectronic sensors for highly sensitive analysis of biomolecules are reviewed. In these studies, semiconductor nanostructures as transistor-based biosensors are discussed from fundamental device behavior through sensing applications and future challenges. Third, the complex interface between nanoelectronics and living biological systems, from single cells to live animals are reviewed. This discussion focuses on representative advances in electrophysiology enabled using semiconductor nanostructures and their nanoelectronic devices for cellular measurements through emerging work where arrays of nanoelectronic devices are incorporated within three-dimensional cell networks that define synthetic and natural tissues. Last, some challenges and exciting future opportunities are discussed.

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Section: Nanostructure Building Blocks and Nanotransistorsmentioning

confidence: 99%

Nano-Bioelectronics

2015

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“…One is synthesizing perfectly aligned SWNT arrays via chemical vapor deposition (CVD) and then removing metallic SWNTs (m‐SWNTs) by such methods as electrical burning, selective plasma/gas etching, light irradiation, or selective chiral growth . The other method is to align purified solution‐dispersed SWNTs, and the used alignment methods include ac‐dielectrophoresis, liquid flow, centrifugal force (spin‐coating), floating evaporative self‐assembly, Langmuir–Blodgett assembly, and vacuum filtration . As‐grown SWNT film generally yields better electrical performance per tube than solution‐processed SWNT film since the CNTs in CVD‐grown film are relatively long and are typically free from effects due to bundles, defects, and surfactant .…”

Section: Progresses In Aligned Cnt Thin‐film Electronicsmentioning

confidence: 99%

Advances in High‐Performance Carbon‐Nanotube Thin‐Film Electronics

Zhu

et al. 2019

Adv Elect Materials

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urgency, and provided a 'beyond CMOS' strategy. In 2008, ITRS suggested industry community to find new emerging materials and devices to replace the state-of-theart silicon and sustain Moore's law. [12][13][14][15] Among emerging channel materials for exploring aggressively scaled MOS FETs, single-walled carbon nanotube (SWCNT) is a strong competitor due to its extremely high carrier mobility, ultrathin body, and excellent stability. [16][17][18][19][20] Its quasi 1D body can provide much better electrostatic gate control on the channel than Si and other semiconductors counterparts (e.g., III-V compounds or Ge). [21][22][23] Since the first demonstration of the carbon nanotube field effect transistor (CNT FET) in 1998, significant progresses have been made on CNT FETs based electronics in the past 20 years, especially for next generation digital elements for ICs. On one hand, intensive researches have been focusing on FETs based on individual CNTs to study the transport properties, optimize device performance, and explore the performance limit. A classic work is the dopingfree fabrication of CMOS CNT FETs, which maintains the high intrinsic carrier mobility and long mean-free-length (MFL) of CNT since the dopant scattering is excluded. Therefore, highperformance ballistic CMOS FETs are easily achievable via a simpler process than conventional Si CMOS technology. [24][25][26][27] Based on doping free approach, CNT CMOS FETs with a gate length of 10 nm have been successfully demonstrated to perform better than Si CMOS FETs with the same gate length but at a lower supply voltage. [28] Furthermore, ultrasmall CNT FETs with a gate length of 5 nm or footprint of 40 nm have been realized through optimizing device structure and process, which has approached the quantum limit of conventional FETs by using approximately only one electron per switching operation on one CNT. [29,30] On the other hand, various scale of ICs have been fabricated on CNT thin films to demonstrate the industrialization possibility, for example, fundamental logic gates with excellent electrical characteristic, [31] high-speed ring oscillators that can work in gigahertz regime, [32,33] and complex and largescale ICs, including decoder, [34] full-adder, [35,36] or even a CNTbased center processing unit (CPU) using p-type CNT FETs or P-MOS. [37] These successful demonstrations of medium or large-scale CNT circuits illustrate the uniformity and stability of CNT materials and transistors, as well as the development potential on ultralarge scale ICs applications. However, access to ideal materials, device structure, and fabrication remain a challenge if we are targeting at the industrialization of highperformance CNT ICs. To minimize confusion, we use the word "CNT thin film FET" to distinguish high performance The device standards necessary for high-performance carbon nanotube (CNT) field-effect transistors (FETs) for integrated circuits (ICs) are discussed by illustrating key device metrics. Recent advances in solution-processed CNT network-materials a...

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“…The major disadvantage of this method is that the size of fibers that are aligned decreases after decomposition of the polymer composite from the SWNT, which will increase the local charge density of the nanotubes. Another simple method is mentioned in [58] where they use micro or nanomanipulators to make an electric contact with the electrodes and move the nanotubes from one place to another for attachment. One end of the tweezer will be in contact with one of the nanotubes and the other end in contact with the other nanotube.…”

Section: Electropolymerization Of Carbon Nanotube Biosensormentioning

confidence: 99%

Protein Biosensors Based on Polymer Nanowires, Carbon Nanotubes and Zinc Oxide Nanorods

Jung

2011

Sensors

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The development of biosensors using electrochemical methods is a promising application in the field of biotechnology. High sensitivity sensors for the bio-detection of proteins have been developed using several kinds of nanomaterials. The performance of the sensors depends on the type of nanostructures with which the biomaterials interact. One dimensional (1-D) structures such as nanowires, nanotubes and nanorods are proven to have high potential for bio-applications. In this paper we review these three different kinds of nanostructures that have attracted much attention at recent times with their great performance as biosensors. Materials such as polymers, carbon and zinc oxide have been widely used for the fabrication of nanostructures because of their enhanced performance in terms of sensitivity, biocompatibility, and ease of preparation. Thus we consider polymer nanowires, carbon nanotubes and zinc oxide nanorods for discussion in this paper. We consider three stages in the development of biosensors: (a) fabrication of biomaterials into nanostructures, (b) alignment of the nanostructures and (c) immobilization of proteins. Two different methods by which the biosensors can be developed at each stage for all the three nanostructures are examined. Finally, we conclude by mentioning some of the major challenges faced by many researchers who seek to fabricate biosensors for real time applications.

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Strategies for Post‐Synthesis Alignment and Immobilization of Carbon Nanotubes

Cited by 41 publications

References 169 publications

Nano-Bioelectronics

Nano-Bioelectronics

Advances in High‐Performance Carbon‐Nanotube Thin‐Film Electronics

Protein Biosensors Based on Polymer Nanowires, Carbon Nanotubes and Zinc Oxide Nanorods

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