Streamer model for ionization growth in a photoconductive power switch

Hudgins, J.L.; Bailey, Di; Dougal, Roger A.; Venkatesan, V.

doi:10.1109/63.406850

Cited by 23 publications

(6 citation statements)

References 19 publications

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“…The current filaments can be regarded as a plasma column that contains a large number of electrons and holes. The streamer model [14], [15] is used in this study to explain the current filaments on the surface of GaAs PCSS. The streamer can be divided into two zones: the head of streamer and the radiation zone.…”

Section: A Low Current Casementioning

confidence: 99%

Research on the Failure Mechanism of High-Power GaAs PCSS

Shi

2015

IEEE Trans. Power Electron.

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This paper presents an experimental study on the failure mechanism of high-power Gallium Arsenide (GaAs)-based photoconductive semiconductor switches (PCSS). Two of the typical failure scenarios of high-power GaAs PCSS are discussed: 1) a failure of a 3-mm-gap GaAs PCSS at output current of 45 A and 2) the failure of two 2-mm-gap GaAs PCSSs at output currents of 1.45 and 1.8 kA, respectively. The failure mechanisms of these two cases are analyzed and summarized as follows: The failure of high-power GaAs PCSS is mainly dominated by the development of current filaments under low output currents. A large number of energetic carriers in the bulk region of the current filament can cause the dot damage. When the dot damage is dense enough to form a continuous chain connecting the PCSS electrodes, a damage path is created and a catastrophic breakdown occurs. The thermal stress is the main cause of the failure of high-power GaAs PCSS under high current scenarios. The stress can cause local microscopic fracture on the surface of PCSS. At the time when these local microscopic fractures reach a critical level, a macroscopic fracture occurs resulting in a disintegration of the high-power PCSS.Index Terms-Power semiconductor switches, semiconductor device breakdown, semiconductor device reliability, semiconductor device thermal factors, semiconductor switches.

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Section: A Low Current Casementioning

confidence: 99%

Research on the Failure Mechanism of High-Power GaAs PCSS

Shi

2015

IEEE Trans. Power Electron.

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“…Until now, several models have been proposed to explain the lock-on effect [14][15][16]. However, the mechanism of the lock-on effect has not well been understood to date due to the great complexity of the dynamics of carriers in GaAs under high electric fields [17,18].…”

Section: Introductionmentioning

confidence: 99%

Multiple charge domains model for the lock-on effect in GaAs power photoconductive switches

Tian¹,

Shi²

2008

J. Phys. D: Appl. Phys.

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This paper reports that the lock-on field of semi-insulating (SI) GaAs photoconductive semiconductor switches (PCSSs) was measured under different bias voltages. Based on the experimental results and the transferred-electron effect, a model for the lock-on effect in GaAs PCSSs is proposed. It is shown that the charge domain with an ultrahigh electric field is due to a high photogenerated carrier density, which gives rise to intensive impact ionization accompanied by electron–hole recombination radiation within the domain. Since new domains can be nucleated uninterruptedly by the carriers generated by absorption of recombination radiation, the forefront domain crosses the switch at a speed alternating between the photon velocity and the carrier saturated drift velocity, which makes the observed velocity of carriers larger than the saturated drift velocity. The lock-on field results from the fixed number of a moving train of avalanching charge domains, the steady-state domains electric fields and the steadfast external electric field of the domains. The recovery of the lock-on effect is caused by domain quenching. The calculations agree with the experimental results. Moreover, the analytical results indicate that SI-GaAs PCSS is essentially a type of photo-activated charge domain device.

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“…In the nonlinear mode, the carrier concentration increases not only through the absorption of the triggering optical pulse but also by gain mechanisms. Although several models have been proposed to explain the nonlinear mode, [9][10][11][12] the physical mechanism of the nonlinear mode is still not well understood until now. 13) As the seed carrier of avalanche, photogenerated carrier density is an important parameter for the carrier multiplication of the nonlinear PCSS.…”

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confidence: 99%

“…Thus far, the avalanche mechanism has not been fully understood and is an important area of study. [11][12][13] In the nonlinear mode, owing to carrier avalanche multiplication, the number of photogenerated carriers is not equal to that of output charges, and the output charge increases with the increase in bias voltage.…”

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confidence: 99%

Optical absorption mechanism of GaAs photoconductive semiconductor switch

Tian

Shi

2018

Jpn. J. Appl. Phys.

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The output charges of linear and nonlinear semi-insulating GaAs photoconductive semiconductor switches (PCSSs) triggered by a 1064 nm nanosecond pulse laser with an energy of millijoule level are measured under different bias voltages. On the basis of the operation mechanism of the linear PCSS, the photogenerated carrier densities of the PCSS are measured. From the results of the comparison between the measured values and the values determined by different absorption mechanisms, the absorption mechanism of the switch is analyzed. As an important parameter of the avalanching charge domain, the effect of the photogenerated carrier density on the output performance of GaAs PCSSs is discussed.

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Streamer model for ionization growth in a photoconductive power switch

Cited by 23 publications

References 19 publications

Research on the Failure Mechanism of High-Power GaAs PCSS

Research on the Failure Mechanism of High-Power GaAs PCSS

Multiple charge domains model for the lock-on effect in GaAs power photoconductive switches

Optical absorption mechanism of GaAs photoconductive semiconductor switch

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