Stress dependence of ferromagnetic resonance and magnetic anisotropy in a thin NiMnSb film on InP(001)

Botters, B.; Giesen, F.; Podbielski, Jan; Bach, P.; Schmidt, G.; Molenkamp, L. W.; Grundler, D.

doi:10.1063/1.2405885

Cited by 43 publications

(24 citation statements)

References 18 publications

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“…This approach has already been shown to allow in-situ manipulation of magnetic anisotropy in piezoelectric actuator/ferromagnet hybrid samples at room temperature. 48,49 We have recently demonstrated that this approach can be transferred to piezoelectric actuator/GaMnAs hybrids, 50 as also reported by Refs. 51 and 52.…”

Section: Introductionmentioning

confidence: 72%

Ga1−xMnxAs/piezoelectric actuator hybrids: A model system for magnetoelastic magnetization manipulation

et al. 2008

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We have investigated the magnetic properties of a piezoelectric actuator/ferromagnetic semiconductor hybrid structure. Using a GaMnAs epilayer as the ferromagnetic semiconductor and applying the piezo stress along its ͓110͔ direction, we quantify the magnetic anisotropy as a function of the voltage V p applied to the piezoelectric actuator using anisotropic magnetoresistance techniques. As the magnetic anisotropy in GaMnAs substantially changes as a function of temperature T, the ratio of the magnetoelastic and the magnetocrystalline anistropies can be tuned from approximately 1/4 to 4. Thus, GaMnAs/piezoelectric actuator hybrids are an ideal model system for the investigation of different piezoelastic magnetization control regimes. At T = 5 K the magnetoelastic term is a minor contribution to the magnetic anisotropy. Nevertheless, we show that the switching fields of ͑ 0 H͒ loops are shifted as a function of V p at this temperature. At 50 K-where the magnetoelastic term dominates the magnetic anisotropy-we are able to tune the magnetization orientation by about 70°solely by means of the electrical voltage V p applied. Furthermore, we derive the magnetostrictive constant 111 as a function of temperature and find values consistent with earlier results. We argue that the piezo voltage control of magnetization orientation is directly transferable to other ferromagnetic/piezoelectric hybrid structures, paving the way to innovative multifunctional device concepts. As an example, we demonstrate piezo voltageinduced irreversible magnetization switching at T = 40 K, which constitutes the basic principle of a nonvolatile memory element.

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Section: Introductionmentioning

confidence: 72%

Ga1−xMnxAs/piezoelectric actuator hybrids: A model system for magnetoelastic magnetization manipulation

et al. 2008

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“…For instance, various nanoelectromechanical and energy harvesting devices employing wurtzite II–VI and III–V semiconductor compounds have recently been demonstrated1. At the same time, nanocomposite23 or hybrid45 piezoelectric/magnetic systems allow for the electric control of magnetization.…”

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confidence: 99%

Stretching magnetism with an electric field in a nitride semiconductor

et al. 2016

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The significant inversion symmetry breaking specific to wurtzite semiconductors, and the associated spontaneous electrical polarization, lead to outstanding features such as high density of carriers at the GaN/(Al,Ga)N interface—exploited in high-power/high-frequency electronics—and piezoelectric capabilities serving for nanodrives, sensors and energy harvesting devices. Here we show that the multifunctionality of nitride semiconductors encompasses also a magnetoelectric effect allowing to control the magnetization by an electric field. We first demonstrate that doping of GaN by Mn results in a semi-insulating material apt to sustain electric fields as high as 5 MV cm−1. Having such a material we find experimentally that the inverse piezoelectric effect controls the magnitude of the single-ion magnetic anisotropy specific to Mn3+ ions in GaN. The corresponding changes in the magnetization can be quantitatively described by a theory developed here.

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“…In this configuration, an electric field changes the elastic strain provided by the underlayer, which modifies the magnetic anisotropy [13] and correspondingly the spin-wave properties of the ferromagnet. Piezoelectrically controlled ferromagnetic resonance has already been established [14,15]. Magnonic devices might be even further advanced using reprogrammable states provided by coupling to ferroelastic domains of a ferroelectric substrate or underlayer.…”

Section: Introductionmentioning

confidence: 99%

Spin waves in CoFeB on ferroelectric domains combining spin mechanics and magnonics

Brandl

Franke

Lahtinen

et al. 2014

Solid State Communications

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Spin dynamics controlled by magnetoelastic coupling and applied electric fields might play a vital role in future developments of magnonics, i.e., the exploitation of spin waves for the transmission and processing of information.We have performed broadband spin-wave spectroscopy on a magnetostrictive CoFeB alloy grown on a ferrolectric BaTiO 3 substrate causing elastic strain with a quasi-periodic modulation. We find characteristic eigenfrequencies and spin-wave modes with large group velocities and small damping. These results suggest bright perspectives for electric-field control of reprogrammable magnonics.

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Stress dependence of ferromagnetic resonance and magnetic anisotropy in a thin NiMnSb film on InP(001)

Cited by 43 publications

References 18 publications

Ga1−xMnxAs/piezoelectric actuator hybrids: A model system for magnetoelastic magnetization manipulation

Ga1−xMnxAs/piezoelectric actuator hybrids: A model system for magnetoelastic magnetization manipulation

Stretching magnetism with an electric field in a nitride semiconductor

Spin waves in CoFeB on ferroelectric domains combining spin mechanics and magnonics

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