International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)
DOI: 10.1109/iedm.2001.979459
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Strong and efficient light emission in ITO/Al/sub 2/O/sub 3/ superlattice tunnel diode

Abstract: We have studied the electroluminescence of ITO/A1,0, superlattice tunnel diode on Si. The light emission intensity and efficiency are >3 orders of magnitude larger than 20A SiO, tunnel diode and 0.18pm MOSFET. Besides the small 3V operation and low power consumption, good reliability is another merit for this device.

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