Structural and electrical characterization of strontium doped barium titanate for radiometric measurement

Chamekh, Mourad; Achour, Z. Ben; Thamri, Atef; Chtourou, Radhwen; Dhahri, E.; Touayar, O.

doi:10.1016/j.cplett.2020.138008

Cited by 12 publications

(1 citation statement)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Among the lead-free BTO-based materials, (Ba,Sr)TiO 3 (BST) with A-site substitution, and Ba(Zr,Ti)O 3 (BZT) with B-site substitution, are the most widely investigated because of the possibility to tune the ferroelectric and dielectric properties by controlling the composition. [32][33][34][35] With increasing substitution of Ba by Sr, there is a phase transition from ferroelectric to relaxor-ferroelectric and further to a paraelectric phase in the BST system, [36,37] while the properties of BZT change from normal ferroelectric behavior to relaxor behavior with an increasing Zr fraction on the B-site. [33,38,39] In order to enhance the energy-storage performance in dielectric capacitors, multilayer structures have been widely investigated in recent years, such as domain engineering, interface engineering, and microstructure control.…”

Section: Introductionmentioning

confidence: 99%

Toward Design Rules for Multilayer Ferroelectric Energy Storage Capacitors – A Study Based on Lead‐Free and Relaxor‐Ferroelectric/Paraelectric Multilayer Devices

Nguyen,

Houwman,

Birkhölzer

et al. 2024

Advanced Materials

View full text Add to dashboard Cite

Future pulsed‐power electronic systems based on dielectric capacitors require the use of environment‐friendly materials with high energy‐storage performance that can operate efficiently and reliably in harsh environments. Here, we present a study of multilayer structures, combining paraelectric‐like Ba0.6Sr0.4TiO3 (BST) with relaxor‐ferroelectric BaZr0.4Ti0.6O3 (BZT) layers on SrTiO3‐buffered Si substrates, with the goal to optimize the high energy‐storage performance. The energy‐storage properties of various stackings are investigated and an extremely large maximum recoverable energy storage density of about 165.6 J cm−3 (energy efficiency ≈ 93%) is achieved for unipolar charging‐discharging of a 25‐nm‐BZT/20‐nm‐BST/910‐nm‐BZT/20‐nm‐BST/25‐nm‐BZT multilayer structure, due to the extremely large breakdown field of 7.5 MV cm−1 and the lack of polarization saturation at high fields in this device. We find strong indications that the breakdown field of the devices is determined by the outer layers of the multilayer stack and can be increased by improving the quality of these layers. We are also able to deduce design optimization rules for this material combination, which we can to a large extend justify by structural analysis. These rules are expected also to be useful for optimizing other multilayer systems and are therefore very relevant for further increasing the energy storage density of capacitors.This article is protected by copyright. All rights reserved

show abstract