Structural and electrical properties of TlGa(SxSe1−x)2 mixed crystals

Karabulut, O.; Parlak, M.; Mamedov, G. M.

doi:10.1016/j.jallcom.2006.04.010

Cited by 13 publications

(5 citation statements)

References 28 publications

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“…The determined energy band gaps E gi = 2.45 eV and E gd = 2.63 eV (TlGaS 2 ), E gi = 1.97 eV and E gd = 2.26 eV (TlGaSe 2 ), and E gi = 2.27 eV and E gd = 2.47 eV (TlInS 2 ) agree well with the corresponding data reported earlier [25,26]. It is observed in Fig.…”

Section: Resultssupporting

confidence: 91%

Composition dependence of lattice parameters and band gap energies of thallium based layered mixed crystals

Gasanly

2014

Indian J Phys

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Compositional dependence of lattice parameters and unit cell volumes of TlMeX 2 -type (Me = Ga or In and X = S or Se) layered mixed crystals with monoclinic structure has been studied by X-ray diffraction technique. It is revealed that the lattice parameters of TlGa 1-x In x Se 2 , TlGa(S 1-x Se x ) 2 , TlGa 1-x In x S 2 and TlIn(Se 1-x S x ) 2 mixed crystals increase due to the substitution of gallium atoms by indium and sulfur atoms by selenium. Moreover, the absorption edges of these mixed crystals have been investigated through the transmission and reflection measurements in the wavelength range of 400-1,100 nm. The analysis of absorption data has revealed the presence of both optical indirect and direct transitions. It is found that the energy band gaps of mixed crystals decrease due to the substitution of gallium atoms by indium and of sulfur atoms by selenium.

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Section: Resultssupporting

confidence: 91%

Composition dependence of lattice parameters and band gap energies of thallium based layered mixed crystals

Gasanly

2014

Indian J Phys

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“…Therefore, these crystals behave like amorphous semiconductors, in which conduction of carriers is dominated by hopping of carriers between localized states. Variable-range hopping conduction along the layers has been reported between the localized states near the Fermi level in layered TlGaS 2 , TlGaSe 2 and TlGa(S x Se 1-x ) 2 mixed crystals [13,17,18]. The frequency dependencies of the electrical conductivity measurements of these crystals were also showed that the dominant conduction mechanism is hopping at low temperatures [19].…”

Section: Resultsmentioning

confidence: 99%

Electrical and optical properties of Co doped TlGaS₂ crystals

Karabulut

Yılmaz

Boz

2010

Cryst. Res. Technol.

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In this study, Co doped TlGaS 2 single crystals which belongs to the class of A III B III X 2 VI have been investigated by means of XRD, temperature dependent dark and illuminated conductivity, Space Charge Limited Currents and absorption measurements. The room temperature conductivity and trap concentration values were about 10 -8 (Ω-cm) -1 and 7.5x10 13 cm -3 , respectively. From the temperature dependent conductivity measurements, two activation energies namely 271 and 12 meV have been determined in the high and low temperature regions, respectively. The trap level at 271 meV that was determined by the dark temperature dependent conductivity measurement has also been verified by Space Charge Limited Currents analysis. The absorption measurements have showed that the layered compound had indirect and direct band gaps and the values were determined to be 2.49 and 2.56 eV, respectively.

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“…[15]. Bakhyshov et al [16] carried out the measurements of the transmission spectra on TlGaS 2x Se 2(1−x) crystals in the temperature range of 77300 K. Recently, we studied the eect of isomorphic atom substitution on the lattice structure and optical absorption edge of TlGa 1−x In x Se 2 [11,17] and TlInS 2x Se 2(1−x) [11,18] …”

Section: Introductionmentioning

confidence: 99%

Tuning Optical Absorption Edge by Composition and Temperature in TlGaS_2xSe_2(1-x)Layered Mixed Crystals (0 ≤ x ≤ 1)

Gasanly

2012

Acta Phys. Pol. A

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Optical properties of TlGaS2xSe 2(1−x) mixed crystals (0 ≤ x ≤ 1) have been studied using the transmission and reection measurements in the wavelength range of 4001100 nm. The optical indirect band gap energies were determined through the analysis of the absorption data. It was found that the energy band gaps increase with increase of sulfur atoms content in TlGaS2xSe 2(1−x) mixed crystals. From the transmission measurements carried out in the temperature range of 10300 K, the rates of change of the indirect band gaps with temperature were established for the dierent compositions of mixed crystals studied.

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Structural and electrical properties of TlGa(SxSe1−x)2 mixed crystals

Cited by 13 publications

References 28 publications

Composition dependence of lattice parameters and band gap energies of thallium based layered mixed crystals

Composition dependence of lattice parameters and band gap energies of thallium based layered mixed crystals

Electrical and optical properties of Co doped TlGaS₂ crystals

Tuning Optical Absorption Edge by Composition and Temperature in TlGaS_2xSe_2(1-x)Layered Mixed Crystals (0 ≤ x ≤ 1)

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Structural and electrical properties of TlGa(SxSe1−x)2 mixed crystals

Cited by 13 publications

References 28 publications

Composition dependence of lattice parameters and band gap energies of thallium based layered mixed crystals

Composition dependence of lattice parameters and band gap energies of thallium based layered mixed crystals

Electrical and optical properties of Co doped TlGaS2 crystals

Tuning Optical Absorption Edge by Composition and Temperature in TlGaS2xSe2(1-x)Layered Mixed Crystals (0 ≤ x ≤ 1)

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Product

Resources

About

Electrical and optical properties of Co doped TlGaS₂ crystals

Tuning Optical Absorption Edge by Composition and Temperature in TlGaS_2xSe_2(1-x)Layered Mixed Crystals (0 ≤ x ≤ 1)