Structural and optical characterization of amorphous As40S60 and As40Se60 films prepared by plasma-enhanced chemical vapor deposition

González-Leal, J.M.; Prieto-Alcón, R.; Márquez, E.

doi:10.1016/j.jnoncrysol.2004.08.001

Cited by 23 publications

(12 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Values of T Mo and T mo are listed in Table 1. Knowing the values of the two envelopes T Mo and T mo helped us to apply Swanepoel method [19][20][21][22][23][24][25][26][27][28] in order to complete to drive all the optical constants as well detailed in the pervious section. The average value of film-thickness d for Ge 10 Se 90Àx Te x films are listed in Table 1 (Fig.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Optical properties of Ge–Se–Te wedge-shaped films by using only transmission spectra

Aly

2009

Journal of Non-Crystalline Solids

View full text Add to dashboard Cite

Section: Resultsmentioning

confidence: 99%

“…(7). Where, the values of T Mo and T mo are known, one can optically characterize the non-uniform chalcogenide films by the applying the procedure corresponding to uniform film [19][20][21][22][23][24][25][26][27][28].…”

Section: Theoretical Considerationsmentioning

confidence: 99%

Optical properties of Ge–Se–Te wedge-shaped films by using only transmission spectra

Aly

2009

Journal of Non-Crystalline Solids

View full text Add to dashboard Cite

“…The envelope technique enabled the determination of the average thickness and the refractive index of the Ch-Gs films with accuracy better than 1% [20]. In view of Ref.…”

Section: Determination Of the Film Thicknessmentioning

confidence: 99%

Spectral optoelectronic features of Cu-containing arsenic sulfide (As2S3)0.95Cu0.05

Badr

Ramadan

Thorrya

2011

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Chalcogenide amorphous thin films of the modification (As 2 S 3 ) 0.95 Cu 0.05 were prepared using a thermal evaporation technique. The optical properties of the resultant films were investigated based on the transmittance spectra in the photon energy range 1.6-2.82 eV. Thicknesses of the films under study were determined using the envelope technique based on the transmittance spectra. The optical measurements were carried out over the conditional temperature extending from 77 to 300 K. The results of the mentioned measurements are conductive tools in investigating the electronic structures of the Chalcogenide Glasses, however the analysis of the experimental results provide information about the optical gap width and elucidate the broadness of the band tail that may disturb the band gap edges. Moreover, the single-effective oscillator was implemented in calculating both the oscillation and dispersion energies of the films under investigation. The static refractive index and the static dielectric constant were also determined for these films.

show abstract

“…It has been found that selenium based alloy are useful due to their greater hardness, high photosensitivity, higher crystallization temperature and small ageing effect as compare to pure Se. Different techniques are used for the preparation of thin films such as thermal evaporation technique [13] chemical bath deposition [14] chemical vapor deposition [15] rf/dc sputtering [16]. The properties mostly depend on the preparation and deposition technique.…”

Section: Introductionmentioning

confidence: 99%

Structural and optical investigation of Cd4Se96−xSx (x = 4, 8, 12) chalcogenide thin films

Ganaie

Zulfequar

2015

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Cd 4 Se 96-x S x with x = 4, 8, 12 chalcogenide semiconductor has been prepared by melt-quenching technique. Thin films were deposited by thermal evaporation technique on ultra clean glass substrates under a high vacuum of 10 -6 Torr and were characterized by XRD, SEM, FTIR and Raman spectroscopy. XRD confirms the prepared films are in nanoscale region having polycrystalline nature with preferred orientation along (002) plan. Optical properties (optical band gap, absorption coefficient, extinction coefficient, refractive index) were investigated in the frequency range of 190-1100 nm. Analysis of the optical measurement shows that the non-direct transition is dominant. It is observed that the optical band gap increase with sulfur (S) concentration. The Dark conductivity as a function of temperature in the temperature range 300-390 K was investigated, which shows that it is thermally activated process. The conductivity increases on the incorporation of Sulfur content, which may be due to shift in Fermi level.

show abstract

Structural and optical characterization of amorphous As40S60 and As40Se60 films prepared by plasma-enhanced chemical vapor deposition

Cited by 23 publications

References 14 publications

Optical properties of Ge–Se–Te wedge-shaped films by using only transmission spectra

Optical properties of Ge–Se–Te wedge-shaped films by using only transmission spectra

Spectral optoelectronic features of Cu-containing arsenic sulfide (As2S3)0.95Cu0.05

Structural and optical investigation of Cd4Se96−xSx (x = 4, 8, 12) chalcogenide thin films

Contact Info

Product

Resources

About