Structural and optical properties of low-temperature ZnO films grown by atomic layer deposition with diethylzinc and water precursors

Kowalik, I.A.; Guziewicz, E.; Kopalko, K.; Yatsunenko, S.; Wójcik-Głodowska, A.; Godlewski, M.; Dłuźewski, P.; Łusakowska, E.; Paszkowicz, W.

doi:10.1016/j.jcrysgro.2008.11.086

Cited by 54 publications

(48 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The root mean square (rms) of a surface roughness depends on deposition temperature and layer thickness as we already reported [7]. The rms value does not exceed 1 nm for films with thickness of 100 nm and less, which is typical thickness used for electronic application.…”

Section: Resultssupporting

confidence: 54%

“…The preferred crystallographic orientation depends on growth temperature, pulsing time of each of precursors and purging time [7]. Therefore we were able to choose such growth conditions which privilege ZnO growth with c axis perpendicular to the surface.…”

Section: Resultsmentioning

confidence: 99%

“…Zinc oxide is regarded as a material of choice, because it can be effectively grown at low temperature limits [6][7][8][9]. ZnO is one of the most intensively investigated materials last years, because of prospective applications in light emitters, solar cells, gas sensors, piezoelectric transducers and acoustic wave devices.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

ZnO by ALD - Advantages of the Material Grown at Low Temperature

et al. 2009

Self Cite

View full text Add to dashboard Cite

The 3D-architecture is a prospective way in miniaturization of electronic devices. However, this approach can be realized only if metal paths are placed not only at the top, but also beneath the electronic parts, which imposes drastic temperature limitations for the electronic device processing. Therefore last years a lot of investigations are focused on materials which can be grown at low temperature with electrical parameters appropriate for electronic applications. Zinc oxide grown by the atomic layer deposition method is one of the materials of choice. We obtained ZnO-ALD films at growth temperature range between 100• C and 200• C, and with controllable electrical parameters. Free carrier concentration was found to scale with deposition temperature, so it is possible to grow ZnO films with desired conductivity without any intentional doping. We used correlation of electrical and optical parameters to optimize the deposition process. Zinc oxide layers obtained in that way have free carrier concentration as low as 10 16 cm −3 and high mobility (10-50 cm 2 /(V s)), which satisfies requirements for a material used in three-dimensional memories.

show abstract

Section: Resultssupporting

confidence: 54%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

ZnO by ALD - Advantages of the Material Grown at Low Temperature

et al. 2009

Self Cite

View full text Add to dashboard Cite

show abstract

“…ZnO is a semiconducting oxide with a wide band gap of 3.37 eV, and it has many advantageous properties, such as thermal and electrical stabilities and optical transparency. 7,8 Having antibacterial and barrier characteristics, ZnO thin films can be applied in food packaging 9,10 and also be used in catalytic applications and surface wetting adjustment due to the photoactivity of ZnO. 11 The possibility to reversibly control the surface wettability from hydrophobic to hydrophilic is especially interesting in applications such as liquid transportation in microfluidic devices.…”

Section: Introductionmentioning

confidence: 99%

Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition

Napari

Malm

Lehto

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

ZnO deposition on metal substrates: Relating fabrication, morphology, and wettability J. Appl. Phys. 113, 184905 (2013) ZnO films were grown by atomic layer deposition at 35 C on poly(methyl methacrylate) substrates using diethylzinc and water precursors. The film growth, morphology, and crystallinity were studied using Rutherford backscattering spectrometry, time-of-flight elastic recoil detection analysis, atomic force microscopy, scanning electron microscopy, and x-ray diffraction. The uniform film growth was reached after several hundreds of deposition cycles, preceded by the precursor penetration into the porous bulk and island-type growth. After the full surface coverage, the ZnO films were stoichiometric, and consisted of large grains (diameter 30 nm) with a film surface roughness up to 6 nm (RMS). The introduction of Al 2 O 3 seed layer enhanced the initial ZnO growth substantially and changed the surface morphology as well as the crystallinity of the deposited ZnO films. Furthermore, the water contact angles of the ZnO films were measured, and upon ultraviolet illumination, the ZnO films on all the substrates became hydrophilic, independent of the film crystallinity.

show abstract

“…Spray pyrolysis and atomic layer epitaxy methods have been employed to synthesize spherical ZnO particles by allowing zinc acetate [Zn(Ac) 2 ] to react with water vapour (Alver et al 2007;Kowalik et al 2009). From this point, if Zn(Ac) 2 and water are dissolved in a solvent with a sufficiently high boiling point, hydrolyzation will occur and the precipitation of ZnO will be obtained.…”

Section: Experimental Designmentioning

confidence: 99%

Synthesis of ZnO submicron spheres by a two-stage solution method

et al. 2011

View full text Add to dashboard Cite

This paper presents a two-stage method to synthesize the mono-dispersed ZnO spheres. The size and uniformity of ZnO spheres can be controlled in the submicrometer range. This makes the method applicable to the fabrication of photonic crystal structures. The effects of different reaction parameters such as reaction temperatures, reaction times, and water concentrations on the formation of ZnO spheres were investigated. On the basis of the experimental results, we discuss and propose a possible mechanism to elucidate the formation of ZnO submicron spheres. Furthermore, the room temperature photoluminescence (PL) measurements of the products were carried out to investigate their optical properties. The PL results showed that the ZnO submicron spheres exhibited a strong ultraviolet emission and a broadband green emission in the visible region.

show abstract

Structural and optical properties of low-temperature ZnO films grown by atomic layer deposition with diethylzinc and water precursors

Cited by 54 publications

References 29 publications

ZnO by ALD - Advantages of the Material Grown at Low Temperature

ZnO by ALD - Advantages of the Material Grown at Low Temperature

Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition

Synthesis of ZnO submicron spheres by a two-stage solution method

Contact Info

Product

Resources

About