Structural and optical properties of MoS2 layers grown by successive two-step chemical vapor deposition method

Qiu, Dongri; Lee, Dong Uk; Pak, Sang Woo; Kim, Eun Kyu

doi:10.1016/j.tsf.2015.01.036

Cited by 19 publications

(11 citation statements)

References 32 publications

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“…2e ). These are typical signs for MoS 2 films 32 – 34 . To characterize the flakes’ structure in more details, a high resolution scanning electron microscope (SEM) image was taken in Fig.…”

Section: Resultsmentioning

confidence: 64%

Effect of Substrate symmetry on the dendrite morphology of MoS2 Film synthesized by CVD

Min

Zhou

et al. 2017

Sci Rep

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In van der Waals epitaxial growth, the substrate plays a particularly important role in the crystal morphology. Here, we synthesized MoS2 by chemical vapour deposition on silicon carbide (SiC). The obtained MoS2 dendritic crystals show six-fold symmetry, which are different from the conventional triangular shapes on SiO2 substrate and from those with three-fold symmetry on SrTiO3 substrate. Interestingly, these MoS2 dendritic crystals on SiC exhibit an average fractal dimension 1.76, which is slightly larger than the classical Diffusion-limited-Aggregation fractal dimension 1.66. The first principle calculation indicates that the six-fold symmetry of the dendritic MoS2 is determined by the lattice symmetry of SiC. To further demonstrating the substrate effect, we break the natural six-fold lattice symmetry of SiC (0001) into groove arrays through etching the substrate. And then we successfully synthesized cross-type dendritic crystal MoS2 with two-fold symmetry. Its average fractal dimension 1.83 is slightly larger than the fractal dimension 1.76 of the previous MoS2 dendrite with six-fold symmetry. In a word, the symmetry of SiC substrate determined the symmetry and the fractal dimension of the dendritic MoS2. This work provides one possibility of inducing the growth orientation of dendritic crystals through controlling the substrate surface symmetry artificially.

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Section: Resultsmentioning

confidence: 64%

Effect of Substrate symmetry on the dendrite morphology of MoS2 Film synthesized by CVD

Min

Zhou

et al. 2017

Sci Rep

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“…Finally, the light was be converted into electrical signal by the charge coupled device (CCD), which is a special semiconductor device with many photosensitive elements in the LabRam HR Evolution with the single grating. The specific test conditions were: Spectral range of 300–450 cm −1 ; PL of 600–800 nm; spectral resolution ≤ 0.65 cm −1 ; spatial resolution was Lateral ≤ 1 μm, longitudinal ≤ 2 μm; Raman spectrum of 10 mW; PL spectrum of 25 mW; the scan time of 10 s; and the accumulation time of 3 s. The Raman and photoluminescence characterization were measured by using the LabRam HR Evolution with 532 nm laser and 50 × objective [23,24,25]. At the same time, in order to master the growth mechanism of monolayer MoS 2 , the X-ray photoelectron spectroscopy and Atomic Force Microscope, were also used.…”

Section: Experimental Methodsmentioning

confidence: 99%

Research on the Factors Affecting the Growth of Large-Size Monolayer MoS2 by APCVD

et al. 2018

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The transition-metal chalcogenides (TMDs) are gaining increased attention from many scientists recently. Monolayer MoS2 is an emerging layered TMD material with many excellent physical and electrical properties. It can be widely used in catalysis, transistors, optoelectronics and integrated circuits. Here, the large-sized monolayer MoS2 is grown on the silicon substrate with a 285-nm-thick oxide layer by atmospheric pressure chemical vapor deposition (APCVD) of sulfurized molybdenum trioxide. This method is simple and it does not require vacuum treatment. In addition, the effects of growth conditions, such as sulfur source, molybdenum source, growth temperature, and argon flow rate on the quality and area of MoS2 are further studied systematically. These analysis results help to master the morphology and optical properties of monolayer MoS2. The high quality, excellent performance, and large-size monolayer MoS2 under the optimal growth condition is characterized by optical microscopy, AFM, XPS, photoluminescence, and Raman spectroscopy. The Raman spectrum and PL mapping show that the grown MoS2 is a uniform triangular monolayer with a side length of 100 μm, which can pave the way for the applications of photodetectors and transistors.

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“…The weak peak located at ∼227.0 eV is assigned to S 2s. For S 2p, two peaks centered at ∼164.0 and ∼162.8 eV are assigned to S 2p 1/2 and 2p 3/2 , respectively . The O 1s core level includes three subpeaks, as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Chemical vapor deposition growth and characterization of drop-like MoS₂/MoO₂granular films

Hao

Yang

Gao

2016

Phys. Status Solidi B

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Monolayer MoS2 is an emerging two‐dimensional semiconductor with wide‐ranging potential applications in novel optoelectronic devices and catalysis. Here, we report the growth of drop‐like monolayer MoS2/MoO2 granular films on SiO2/Si substrate by chemical vapor deposition method. The as‐synthesized films were systematically characterized by various means of optical microscopy, X‐ray/ultraviolet photoemission spectroscopy, scanning electron microscopy, atomic/kelvin force microscopy, X‐ray diffraction, Raman and photoluminescence techniques. The combined results of atomic force microscopy and scanning electron microscopy clearly present novel drop‐like granulars and domain boundaries, ascribed to lower growth temperature. X‐ray photoemission spectroscopy results complemented by Raman and X‐ray diffraction results confirm the formation of MoS2/MoO2 granular films. The ultraviolet photoemission spectroscopy, along with kelvin force microscopy, reveals a different nature of surface potential of drop‐like MoS2 granular films compared with crystalline MoS2, owing to electron transfer from MoS2 to MoO2 and drop‐like structure. Our study broadens the scope of two‐dimensional transition metal dichalcogenides research and reveals the distinct physical properties of drop‐like monolayer MoS2 granular films.

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Structural and optical properties of MoS2 layers grown by successive two-step chemical vapor deposition method

Cited by 19 publications

References 32 publications

Effect of Substrate symmetry on the dendrite morphology of MoS2 Film synthesized by CVD

Effect of Substrate symmetry on the dendrite morphology of MoS2 Film synthesized by CVD

Research on the Factors Affecting the Growth of Large-Size Monolayer MoS2 by APCVD

Chemical vapor deposition growth and characterization of drop-like MoS₂/MoO₂granular films

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Structural and optical properties of MoS2 layers grown by successive two-step chemical vapor deposition method

Cited by 19 publications

References 32 publications

Effect of Substrate symmetry on the dendrite morphology of MoS2 Film synthesized by CVD

Effect of Substrate symmetry on the dendrite morphology of MoS2 Film synthesized by CVD

Research on the Factors Affecting the Growth of Large-Size Monolayer MoS2 by APCVD

Chemical vapor deposition growth and characterization of drop-like MoS2/MoO2granular films

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Chemical vapor deposition growth and characterization of drop-like MoS₂/MoO₂granular films