Structural and optical properties of Cu2O crystalline electrodeposited films

Brandt, Iuri S.; Martins, Cesar A.; Zoldan, Vinícius C.; Viegas, A.D.C.; Silva, José Humberto Dias da; Pasa, André A.

doi:10.1016/j.tsf.2014.04.013

Cited by 50 publications

(35 citation statements)

References 35 publications

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“…A good best linear fitting is obtained for this representation which supports the applicability of direct allowed transition type for Cu 2 O thin film. The obtained direct band gap of Cu 2 O thin film was found to be 2.02 eV, which is in agreement with those previously reported in the literature [1,2,[27][28][29].…”

Section: Optical Characterization Of Cu 2 O Thin Filmsupporting

confidence: 92%

Nanocrystalline Cu2O/p-Si solar light-responsive Schottky photodiode

et al. 2015

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Nanocrystalline of Cu 2 O thin film was synthesized by sol-gel spin-coating technique. The spectrophotometric characteristics of transmission and reflection were studied for the film deposited on glass substrate. The optical absorption measurements near the absorption edge indicate that the absorption mechanism is due to allowed direct transition with energy gap value of 2.09 eV. The current-voltage characteristics of Al/Cu 2 O/p-Si/Al diode were studied under dark and various light intensities in the range 20-100 mW/cm 2 . The main diode parameters such as barrier height, ideality factor, series resistance were calculated from the analysis of current-voltage characteristics and studied under various illumination intensities. Moreover, the results indicate that the diode has a high photoresponsivity and the photocurrent increases with increasing light intensity which supports the availability of the diode for photosensor applications. The capacitance and conductance characteristics indicate that the diode highly depends on both voltage and frequency. Higher increase in the capacitance under low frequency as well as the presence of a characteristic peak in the capacitancefrequency characteristics indicates the presence of interface states. Moreover, the stronger parameters of the diode performance such as series resistance and interface states were extracted from the capacitance-voltage-frequency and conductance-voltage-frequency characteristics.

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Section: Optical Characterization Of Cu 2 O Thin Filmsupporting

confidence: 92%

Nanocrystalline Cu2O/p-Si solar light-responsive Schottky photodiode

et al. 2015

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“…6a). The oscillation profile observed in our studies was similar to that reported for Cu 2 O thin film and attributed to the modulated interference fringes in the transparent region of Cu 2 O films [36]. The optical band gap (E g ) was measured to be 2.10 eV and 2.21 eV.…”

Section: Optical Propertiessupporting

confidence: 88%

Ion implantation induced phase transformation and enhanced crystallinity of as deposited copper oxide thin films by pulsed laser deposition

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Dutta

Sekhon

et al. 2015

Superlattices and Microstructures

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“…n-Si(100) and Ni evaporated on n-Si(100). Recently, our group showed that these two substrates are suitable for morphological, structural and optical studies on Cu 2 O [13]. Moreover, the Cu 2 O/Ni structure may be employed on photochemical [23] and spin transport [24] investigations.…”

Section: Introductionmentioning

confidence: 99%

Substrate effects and diffusion dominated roughening in Cu2O electrodeposition

Brandt

Zoldan

Stenger

et al. 2015

Journal of Applied Physics

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Cuprous oxide (Cu2O) films from 25 nm to 1500 nm were electrodeposited on n-Si(100) and Ni/n-Si(100) substrates from aqueous solution at room temperature. X-ray diffraction and transmission electron microscopy imaging show that the Cu2O structure and morphology is strongly affected by the substrate choice, with V shape and U shape columnar growth on n-Si(100) and Ni/n-Si(100), respectively. Atomic force microscopy reveals the presence of rounded grains at the surface in both cases. Anomalous and normal roughening are observed in films grown on n-Si and Ni, respectively, but estimates of scaling exponents are not conclusive. On the other hand, the distributions of local heights, roughness, and extremal heights show good agreement with those of the fourth order linear stochastic equation of Mullins and Herring (MH). Thus, surface dynamics in both systems is dominated by diffusion of adsorbed molecules, with no large scale effect of possible inhomogeneities in mass flux from the solution or in reaction and adsorption rates. In growth on n-Si substrates, the noise amplitude of the MH equation increases in time as t 0.8 , while the coefficient of the curvaturerelated term is time-independent.Step edge energy barriers restrict the mass flux across grain boundaries, thus a broad size distribution of initial grains leads to coarsening of the larger ones. This explains their V shape in the thickest films and establishes a connection with the anomalous roughening. These effects are reduced in films grown on Ni/n-Si, which initially have much larger grains with narrower size distributions and, consequently, smaller fluctuations in coarse grained growth rates. Thus, despite the relevance of electrochemical conditions for Cu2O films to grow and their influence on crystallographic orientation, large scale surface features are determined by physical properties of the material and its interactions with the substrate, with a universal microscopic dynamics similar to vapor deposition. arXiv:1509.04787v1 [cond-mat.mtrl-sci] 16 Sep 2015

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Structural and optical properties of Cu2O crystalline electrodeposited films

Cited by 50 publications

References 35 publications

Nanocrystalline Cu2O/p-Si solar light-responsive Schottky photodiode

Nanocrystalline Cu2O/p-Si solar light-responsive Schottky photodiode

Ion implantation induced phase transformation and enhanced crystallinity of as deposited copper oxide thin films by pulsed laser deposition

Substrate effects and diffusion dominated roughening in Cu2O electrodeposition

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