Structural and optical properties of cadmium telluride obtained by physical vapor deposition technique

Yavorskyi, R.; Nykyruy, Lyubomyr; Wisz, G.; Потера, П.; Adamiak, S.; Górny, Sz.

doi:10.1007/s13204-018-0872-z

Cited by 35 publications

(24 citation statements)

References 37 publications

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“…Absorption edge is about 800 nm for all samples, which is completely consistent with the width of the bandgap of CdTe thin films [26]. In addition, the observed interference patterns in the optical transmission spectra are the indication for the thickness homogeneity of deposited films [27].…”

Section: Resultssupporting

confidence: 77%

Optical properties of CdS/CdTe heterojunction prepared by physical vapor deposition technique

Nykyruy¹,

Yaremiichuk²,

Zapukhlyak³

et al. 2019

PCSS

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The paper presents the study of the optical properties of a thin layer of Cadmium Sulphide deposited on Cadmium Telluride films. CdTe thin films were obtained by vapor phase condensation method using different technological factors, in particular, different thickness (different time of deposition τ) on glass substrates. After deposition the optical properties were analysed by Swanepoel method, using transmission spectra. The upper thin layer of CdS was deposited by thermal evaporation method on CdTe thin films. The change in optical properties of CdS/CdTe heterojunction in comparison with CdTe thin films was investigated. Using a Swanepoel method were calculated the main optical constants, such as refractive index, absorption coefficient and optical conductivity. By this method the thickness of the thin film was determined and compared with the experimental values obtained by the profilometer.

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Section: Resultssupporting

confidence: 77%

Optical properties of CdS/CdTe heterojunction prepared by physical vapor deposition technique

Nykyruy¹,

Yaremiichuk²,

Zapukhlyak³

et al. 2019

PCSS

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“…The obtained value of the ZnO: Al thin film thickness is 454.83 nm. The optical properties of a thin film (refractive index n(λ), absorption coefficient α(λ), extinction coefficient k(λ), dielectric functions ε(λ), optical conductivity σ(λ) and thickness d) can be easily evaluated from a transmission spectrum with interference effects using the envelope method [26][27][28][29][30][31] (Fig. 2).…”

Section: Resultsmentioning

confidence: 99%

Effect of Al doping on optical properties of ZnO thin films: theory and experiment

Kovalenko

Bovgyra

Dzikovskyi

et al. 2021

Phys. Chem. Solid St.

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The structural, electronic, and optical properties of zinc oxide thin films with Al-doping have been investigated experimentally and with density functional theory (DFT) calculations. Changes in properties of doped thin films, which are deposited on a glass substrate by a high-frequency magnetron sputtering method, are monitored using X-ray diffraction data and UV measurements. Our theoretical calculations show that the electronic structure of ZnO: Al can be well described by the DFT+U method. The XRD measurements demonstrated the formation of a pure single ZnO phase and Al atoms is well incorporated in the ZnO lattice. Also, we determine the optical constants such as optical dielectric function, refractive index, optical band gap values, extinction coefficient, and optical conductivity of the doping films through transmittance spectra. The calculated results show the change of lattice parameters Al-doped ZnO. The optical band gap of ZnO: Al is increased compared with pure ZnO. Besides, around the Fermi level of Al-doped ZnO was emerged the shallow donor states from mainly 3s-Al states. Our DFT calculations of optical properties Al-doped ZnO agree satisfactorily with the experimentally measured transmittance values.

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“…Fig. 3 (b) shows the dependence (αhν) 2 -hν obtained by the Tauk formula [17]. The band gap is estimated by extrapolation from the intersection of the linear part at α = 0.…”

Section: Optical Modelmentioning

confidence: 99%

“…The authors of this paper developed a simple, cheap and reproducible technology for obtaining thin-film heterostructures CdS/CdTe with a given surface morphology during open evaporation in vacuum, which allows to obtain homogeneity of the base layer for better absorption of solar radiation and contributes to their low cost [17,18]. It was obtained an efficiency of 15.8% for deposited CdS/CdTe heterostructure on glass substrate [19].…”

Section: Introductionmentioning

confidence: 99%

SCAPS modelling of ZnO/CdS/CdTe/CuO photovoltaic heterosystem

Zapukhlyak

Nykyruy

Wisz

et al. 2020

Phys. Chem. Solid St.

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The authors have developed a simple, cheap and reproducible technology for obtaining thin-film heterostructures based on CdTe with a given surface morphology during vacuum deposition, which contributes to their low cost [1, 2]. The critical dimensions (thicknesses) of individual layers of the heterostructure were substantiated, a simulation was performed and a wide range of optical properties was investigated [3]. It is shown that for the deposited CdS / CdTe heterostructure on glass it is possible to obtain an efficiency of 15.8%. Given that thin films are relatively new systems, their study can offer much wider opportunities for technological improvement of photovoltaic energy converters. According to the analysis of modern literature data, the efficiency can be increased by performing deposition on ITO films and introducing nanoparticles of controlled sizes.

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Structural and optical properties of cadmium telluride obtained by physical vapor deposition technique

Cited by 35 publications

References 37 publications

Optical properties of CdS/CdTe heterojunction prepared by physical vapor deposition technique

Optical properties of CdS/CdTe heterojunction prepared by physical vapor deposition technique

Effect of Al doping on optical properties of ZnO thin films: theory and experiment

SCAPS modelling of ZnO/CdS/CdTe/CuO photovoltaic heterosystem

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