1998
DOI: 10.1051/epjap:1998162
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Structural and optical properties of Ag2S thin films prepared by spray pyrolysis

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Cited by 45 publications
(28 citation statements)
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“…[10] Silver sulfide (Ag 2 S) is a direct, narrow-bandgap semiconductor with good chemical stability and excellent optical limiting properties, as well as an unusual solid ionic conductor that operates at room temperature and conducts both electrons and ions. [11][12][13] It has significant applications in optical and electronic devices such as photoconductors, photovoltaic cells, and superionic conductors. [14][15][16] Single-crystalline Ag 2 S nanowires can be expected to have superior properties owing to their anisotropic geometry, large surface-to-volume ratio, and carrier and photon confinement in two dimensions.…”
mentioning
confidence: 99%
“…[10] Silver sulfide (Ag 2 S) is a direct, narrow-bandgap semiconductor with good chemical stability and excellent optical limiting properties, as well as an unusual solid ionic conductor that operates at room temperature and conducts both electrons and ions. [11][12][13] It has significant applications in optical and electronic devices such as photoconductors, photovoltaic cells, and superionic conductors. [14][15][16] Single-crystalline Ag 2 S nanowires can be expected to have superior properties owing to their anisotropic geometry, large surface-to-volume ratio, and carrier and photon confinement in two dimensions.…”
mentioning
confidence: 99%
“…For the structural study, the substrate temperature T s was chosen in the range 200±250 C. This temperature domain was optimized previously in our laboratory [1]. In the same way, the pyrex glass and pyrex substrates were coated by a thin film of tin oxide SnO 2 : F with an area of 4 cm 2 .…”
Section: Thin Film Preparationmentioning
confidence: 99%
“…It has attracted considerable attention of a wide variety of potential applications like IR detectors and photosensitive films in optoelectronical devices [2±5], principal element in thermopower cells [6] and solar-selective coatings [7]. Its band gap value E g % 1.14 eV and relatively high absorption coefficient (a % 10 4 cm ± ±1 ) [1] show that this material is required to work as a photoconductor in photoconducting cells. Thin films of Ag 2 S have been prepared by different methods [8±10].…”
Section: Introductionmentioning
confidence: 99%
“…Aer hundreds of attempts, we came to the conclusion that such temperature ranges are not suitable but for elaborating ternary oxides. Dlala et al [16], succeeded to stabilize Ag 2 S thin �lms; Amlouk et al [17] elaborated SnO 2 :F and CdS airless sprayed layers Khélia et al [18], Kamoun et al [19], and Amlouk et al [20] fabricated and characterized -SnS 2 and -In 2-Al S 3 compounds at low temperatures. Binary sulphide compounds such as Ag 2 S, Cu 2 S, SnS 2 , and In 2 S 3 have been obtained in our laboratory in 200-320 ∘ C domain of temperature.…”
Section: Introductionmentioning
confidence: 99%