Structural and optical studies of GaSb implanted with iron ions

Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide

“…Moreover, it is also a very good substrate for semiconductor integrated devices, because of its lattice parameter (6.09 Å) being very near to the lattice parameter of other semiconductors such as InAs, GaAlAs and CdTe [3]. Also, detection at longer wavelength, [8][9][10][11][12][13][14] lm is possible with intersub-band absorption in antimonide based superlattices [4]. Finally, one of the most promising applications of GaSb is in the development of thermophotovoltaic cells based on GaSb materials, either in bulk or in thin-film configurations.…”

“…The structural, optical and electrical properties of this material can be modified by ion implantation or swift heavy ion beams. Several reports on the modification of GaSb by low energy ion implantation (keV energy range) with various fluences and species are available in the literature [7][8][9][10][11]. However, limited reports are available with swift heavy ion beams [12][13][14][15][16].…”