J. Mater. Chem. C
 2024
DOI: 10.1039/d3tc04698b
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Structural changes in HfSe2and ZrSe2thin films with various oxidation methods

Alexandre C. Foucher,
Wouter Mortelmans,
Wu Bing
et al.

Abstract: Plasma oxidation is the most efficient method to form defect-free oxide layers on top of HfSe2 and ZrSe2 transition metal dichalcogenides, whereas thermal oxidation causes the formation of defects and cavities in the oxide.

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