2003 International Symposium on VLSI Technology, Systems and Applications. Proceedings of Technical Papers. (IEEE Cat. No.03TH8
DOI: 10.1109/vtsa.2003.1252566
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Structural demonstration of cost effective isolation trench fill for sub-110 nm vertical trench DRAM and SOC applications

Shiwen Yang1,
Will Liao2,
Laertis Economikos3
et al.
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