Structural, electric and magnetic properties of Pb(Zr0.2Ti0.8)O3–CoFe2O4 heterostructures

Chirilă, Cristina; Ibanescu, G. A.; Hrib, Luminiţa; Negrea, Raluca; Pasuk, Iuliana; Kuncser, V.; Pintilie, I.; Pintilie, L.

doi:10.1016/j.tsf.2013.06.033

Cited by 12 publications

(3 citation statements)

References 40 publications

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“…The first part of the study consists in analysing the influence of the PZT (20/80)-CFO or BTO-CFO interfaces on the structural, ferroelectric and dielectric properties of the multilayer. Two different configurations, symmetrical (PZT-CFO-PZT or BTO-CFO-BTO) and asymmetrical (PZT-CFO or BTO-CFO), have been selected and deposited on (100) STO single crystal with SRO bottom electrode [41].…”

Section: Ferroelectric Multilayered Thin Films: Structural and Electrmentioning

confidence: 99%

Electrical Properties of Epitaxial Ferroelectric Heterostructures

Boni¹,

Chirilă²,

Negrea³

et al. 2018

Epitaxy

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In the context of miniaturization of devices, ferroelectric materials are used as multifunctional materials for their well-known intrinsic properties, especially for the switching of polarization in an applied electric field. The high-quality epitaxial thin film structures are used for the possibility to study different effects as low dimensions, interface, strain and strain gradients on ferroelectric materials and other electric characteristics, also representing a possibility to obtain new phenomena and properties that can be used for development of new devices with different functionalities. This chapter is a summary of the ferroelectric and dielectric behaviour of epitaxial thin films of Pb(Zr,Ti)O 3 (PZT) and BaTiO 3 (BTO) obtained by pulsed laser deposition and the correlation with structural quality of the layers and with different electrostatic conditions induced either by electrodes or by the different interlayers. For this purpose in the first part, studies regarding the influence of the substrates and of different top electrodes are performed for Pb(Zr,Ti) O 3 (PZT) 52/48. In the second part, we focused on artificial multiferroic structures from alternating layers of PZT 20/80 or BaTiO 3 (BTO) as ferroelectric phase and CoFe 2 O 4 (CFO) as magnetic material. We found that interface configuration and strain engineering could control ferroelectric hysteresis, the capacitance or the leakage current magnitude.

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Section: Ferroelectric Multilayered Thin Films: Structural and Electrmentioning

confidence: 99%

Electrical Properties of Epitaxial Ferroelectric Heterostructures

Boni¹,

Chirilă²,

Negrea³

et al. 2018

Epitaxy

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show abstract

“…Details on PLD deposition of similar samples can be found elsewhere. 43,44 The structural quality of the films was investigated by X-ray diffraction, using a Bruker D-8 Advance diffractometer in parallel beam setting. The measurements were performed in coplanar geometry with horizontal sample stage, using monochromatized Cu-Ka1 radiation (Ka ¼ 1.5406 A ).…”

Section: A Sample Preparationmentioning

confidence: 99%

General equivalent circuit derived from capacitance and impedance measurements performed on epitaxial ferroelectric thin films

Pintilie

Hrib

Pasuk

et al. 2014

Journal of Applied Physics

Self Cite

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Voltage and frequency dependent capacitance measurements were performed on epitaxial BaTiO3 and Pb(Zr0.2Ti0.8)O3 thin films deposited on single crystal SrTiO3 substrates with (001) and (111) orientations. The measured capacitors have common bottom SrRuO3 contact and different metals as top electrodes: SrRuO3, Pt, Cu, Al, and Au. The capacitance-voltage characteristics were used to extract information regarding the density of the free carriers and the linear contribution to the static dielectric constant. The frequency dependent impedance was used to develop a suitable equivalent circuit for the epitaxial ferroelectric capacitors. It was found that the frequency dependence of the imaginary part of the impedance can be well simulated, in all cases, using a circuit composed of Schottky-type capacitance related to electrode interfaces, contact resistance, and the R-C parallel connection related to the ferroelectric volume of the film. Values for the components of the equivalent circuit were obtained by fitting the experimental data with the simulated curves. These were then used to extract quantities such as dielectric constant in the ferroelectric volume, the width of the depletion layers, and the apparent built-in potential. It was found that, although the investigated capacitors are of different ferroelectric materials, grown on substrates with different orientations, and having different metals as top electrodes, the values for the capacitance associated with the Schottky contacts and the apparent built-in potential are not very different. The results suggest a strong influence of ferroelectric polarization on the electrode interface properties in the case of epitaxial ferroelectric films.

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“…Seed layer could provide more nucleation sites to form the Pe structure even without post-annealing. In addition, various oxide films were employed to facilitate the crystallinity or preferred orientation, such as SrRuO 3 , PbTiO 3 , La 0.7 Sr 0.3 MnO, IrO 2 , TiO x and so on [34][35][36][37][38]. It is interesting to note that the average grain size of the PZT films on a crystalline substrate was slightly larger than that on an amorphous substrate.…”

Section: Substratementioning

confidence: 99%

Synthesis, Microstructure and Properties of Magnetron Sputtered Lead Zirconate Titanate (PZT) Thin Film Coatings

Song

Wang

et al. 2021

Coatings

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Compared to aluminum nitride (AlN) with simple stoichiometry, lead zirconate titanate thin films (PZT) are the other promising candidate in advanced micro-electro-mechanical system (MEMS) devices due to their excellent piezoelectric and dielectric properties. The fabrication of PZT thin films with a large area is challenging but in urgent demand. Therefore, it is necessary to establish the relationships between synthesis parameters and specific properties. Compared to sol-gel and pulsed laser deposition techniques, this review highlights a magnetron sputtering technique owing to its high feasibility and controllability. In this review, we survey the microstructural characteristics of PZT thin films, as well as synthesis parameters (such as substrate, deposition temperature, gas atmosphere, and annealing temperature, etc.) and functional proper-ties (such as dielectric, piezoelectric, and ferroelectric, etc). The dependence of these influential factors is particularly emphasized in this review, which could provide experimental guidance for researchers to acquire PZT thin films with expected properties by a magnetron sputtering technique.

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Structural, electric and magnetic properties of Pb(Zr0.2Ti0.8)O3–CoFe2O4 heterostructures

Cited by 12 publications

References 40 publications

Electrical Properties of Epitaxial Ferroelectric Heterostructures

Electrical Properties of Epitaxial Ferroelectric Heterostructures

General equivalent circuit derived from capacitance and impedance measurements performed on epitaxial ferroelectric thin films

Synthesis, Microstructure and Properties of Magnetron Sputtered Lead Zirconate Titanate (PZT) Thin Film Coatings

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