Structural investigation of keV Ar-ion-induced surface ripples in Si by cross-sectional transmission electron microscopy

Chini, Tapas Kumar; Okuyama, F.; Tanemura, Masaki; Nordlund, K.

doi:10.1103/physrevb.67.205403

Cited by 88 publications

(54 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, note that similar relief, so-called ripples, can be observed on samples irradiated with ions of lower energy (few hundred of keV) to higher fluences (above 10 20 m -2 ) [47][48][49]. Nevertheless, this phenomenon differs from that observed in this study, first because of the irradiation conditions, and second because ripples are usually observed as well in the amorphous layer as in the crystalline structure under the amorphous layer [47,48].…”

Section: Discussionsupporting

confidence: 45%

Formation of nanosized hills on Ti3SiC2 oxide layer irradiated with swift heavy ions

Nappé

Monnet

Audubert

et al. 2012

Nuclear Instruments and Methods in Physics Research Section B:

View full text Add to dashboard Cite

In the framework of the Generation IV International Forum, carbides are sensed for the design of the fuel cladding of the Gas-cooled Fast Reactor. Among the studied carbides, Ti 3 SiC 2 has the advantage of combining the properties of both metals and ceramics. After performing irradiations with 92 MeV Xe ions to 10 19 m -2 , hills were observed by AFM on the surface of Ti 3 SiC 2 . Such topographic modification seems to have never been observed in other materials irradiated in such conditions. A characterization of these hills by both XPS and X-TEM highlighted that these surface modifications do not appear in Ti 3 SiC 2 but in a native amorphous oxide layer on the sample. Moreover, the thickness of this oxide layer grows under irradiation. The comparison between different irradiations permitted to conclude that this surface modification is due to electronic interactions in this amorphous layer, and a threshold in electronic stopping power for hill formation is evidenced.

show abstract

Section: Discussionsupporting

confidence: 45%

Formation of nanosized hills on Ti3SiC2 oxide layer irradiated with swift heavy ions

Nappé

Monnet

Audubert

et al. 2012

Nuclear Instruments and Methods in Physics Research Section B:

View full text Add to dashboard Cite

show abstract

“…The dependence of the thickness of the irradiated layer on the ion incidence angle is also nicely seen in cross-sectional TEM images of Ar-irradiated Si (Ref. [44] or Fig. 22 of Ref.…”

Section: Curvature-dependent Erosionmentioning

confidence: 80%

Surface instability and pattern formation by ion-induced erosion and mass redistribution

Hofsäß

2013

Appl. Phys. A

View full text Add to dashboard Cite

The contribution of curvature dependent sputtering and mass redistribution to ion-induced self-organized formation of periodic surface nanopatterns is revisited. Ion incidence angle-dependent curvature coefficients and ripple wavelengths are calculated from 3-dimensional collision cascade data obtained from binary collision Monte Carlo simulations. Significant modifications concerning mass redistribution compared to the model of Carter and Vishnyakov and also models based on crater functions are introduced. Furthermore, I find that curvature-dependent erosion is the dominating contribution to pattern formation, except for very low-energy irradiation of a light matrix with heavy ions. The major modifications regarding mass redistribution and ion-induced viscous flow are related to the ion incidence angle-dependent thickness of the irradiated layer. A smaller modification concerns the relaxation of inward-directed mass redistribution. Ioninduced viscous flow in the surface layer also depends on the layer thickness and is thus strongly angle dependent. Simulation results are presented and compared to a variety of published experimental results. The simulations show that in most cases curvature-dependent erosion is the dominant contribution to surface instability and ripple pattern formation and also determines the pattern orientation transition. The simulations predict the occurrence of perpendicular ripple patterns at larger ion incidence angles, in agreement with experimental observations. Mass redistribution causes stabilization of the surface at near-normal ion incidence angles and dominates pattern formation only at very low ion energies.

show abstract

“…The focus and contrast conditions of the multibeam image are selected to magnify the amorphous crystalline interface contrast. Note that, akin to experiments at medium energies [37], the free and the amorphous-crystalline (a-c) interfaces that bound the amorphous layer both exhibit similarly rippled topographies with a horizontal shift, motivating hypothesis to be made in our continuum model below.…”

Section: Sample Analysismentioning

confidence: 84%

Nonuniversality due to inhomogeneous stress in semiconductor surface nanopatterning by low-energy ion-beam irradiation

et al. 2015

View full text Add to dashboard Cite

A lack of universality with respect to ion species has been recently established in nanostructuring of semiconductor surfaces by low-energy ion-beam bombardment. This variability affects basic properties of the pattern formation process, like the critical incidence angle for pattern formation, and has remained unaccounted for. Here, we show that nonuniform generation of stress across the damaged amorphous layer induced by the irradiation is a key factor behind the range of experimental observations, as the form of the stress field is controlled by the ion/target combination. This effect acts in synergy with the nontrivial evolution of the amorphous-crystalline interface. We reach these conclusions by contrasting a multiscale theoretical approach, which combines molecular dynamics and a continuum viscous flow model, with experiments using Xe + and Ar + ions on a Si(100) target. Our general approach can apply to a variety of semiconductor systems and conditions.

show abstract

Structural investigation of keV Ar-ion-induced surface ripples in Si by cross-sectional transmission electron microscopy

Cited by 88 publications

References 35 publications

Formation of nanosized hills on Ti3SiC2 oxide layer irradiated with swift heavy ions

Formation of nanosized hills on Ti3SiC2 oxide layer irradiated with swift heavy ions

Surface instability and pattern formation by ion-induced erosion and mass redistribution

Nonuniversality due to inhomogeneous stress in semiconductor surface nanopatterning by low-energy ion-beam irradiation

Contact Info

Product

Resources

About