Structural, morphological and dielectric properties of Li-doped Al2O3

Dar, Farooq Ahmad; Shah, M. A.

doi:10.1007/s00339-018-1925-6

Cited by 5 publications

(1 citation statement)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The averaged profiles of ϵ r for various concentrations of Cr 2 O 3 are shown in figure 9, where error bars were removed for better clarity 4 . The section of the relative permittivity with respect to the concentration of Cr We can see that the relative permittivity does not significantly differ from pure Al 2 O 3 or ELC ceramics compared to results published in [22,38], where doping of Al 2 O 3 by MgAl 2 O 4 or Li 1+ respectively lead to an increase of the dielectric constant up to several hundred. Besides some small fluctuations, values of the relative permittivity of samples used for 4 The missing data for 21 kHz were caused by an internal error of the device during automated measurement.…”

Section: Relative Permittivity Measurementssupporting

confidence: 51%

Complex characterisation of Cr-doped α-Al 2O3 for DBD applications

Svandova,

Pazderka,

Pribyl

et al. 2024

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Al2O3 samples doped with Cr2O3 up to 10 vol.% (12.7 wt%) were investigated with respect to their electrical, structural and morphological properties relevant to their use as a dielectric barrier in dielectric barrier discharges (DBDs). The surface properties were analyzed using atomic force microscopy (AFM) and a scanning electron microscope (SEM). The structural properties were investigated using X-ray diffraction analysis (XRD). Regarding electrical properties, we measured the dielectric constant of the material, the discharge ignition voltage in coplanar configuration in air as well as in nitrogen, and the working domains (WD) of atmospheric pressure Townsend discharge (APTD). The charge-trapping properties of the studied samples were measured by an electrostatic voltmeter. There was observed a significant ignition voltage decrease with maximal decrease for sample dopped with 1 vol.% Cr2O3. For the samples doped with 10 vol.% of Cr2O3 a rapid surface potential decay was observed that is important from the viewpoint of DBDs plasma filamentation due to the so-called surface memory effect. The WDs of the APTD showed a variations and it has been significantly extended for 5Cr sample up to at least 24 kHz compared to other samples. Thus, results presented in this paper show potential of Cr-dopped dielectric barriers and points towards future research directions.

show abstract