2021
DOI: 10.1016/j.jmmm.2021.167914
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Structural, morphological and magnetic properties of iron oxide thin films obtained by atomic layer deposition as a function of their thickness

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Cited by 12 publications
(3 citation statements)
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“…Each cycle consisted of a 0.015 s pulse of trimethylaluminum (Al(CH 3 ) 3 ) (TMA) (Sigma Aldrich, Santiago, Chile) with a 30 s purge, followed by a 0.015 s pulse of ultrapure water (H 2 O) with a 60 s purge. The precursors were used at room temperature, while the reactor was kept at a temperature of 80 [26]. It is important to note that throughout the process, a flow of 20 sccm of nitrogen was maintained.…”
Section: Synthesis Of Spherical Pvp/al 2 O 3 Particlesmentioning
confidence: 99%
See 1 more Smart Citation
“…Each cycle consisted of a 0.015 s pulse of trimethylaluminum (Al(CH 3 ) 3 ) (TMA) (Sigma Aldrich, Santiago, Chile) with a 30 s purge, followed by a 0.015 s pulse of ultrapure water (H 2 O) with a 60 s purge. The precursors were used at room temperature, while the reactor was kept at a temperature of 80 [26]. It is important to note that throughout the process, a flow of 20 sccm of nitrogen was maintained.…”
Section: Synthesis Of Spherical Pvp/al 2 O 3 Particlesmentioning
confidence: 99%
“…On the other hand, the ozone at a volume concentration close to 10% was obtained from an ozone generator (Ol80W/FM100V) (Black Diamond, AB, Canada). The pulse times of ferrocene and ozone in the FeCp2/O3 cycle were 2 s and 0.2 s, respectively; the exposure and pump times were 5 s and 15 s, respectively, thus, obtaining spherical PVP/Al2O3/Fe2O3 particles [26]. It is important to note that throughout the process, a flow of 20 sccm of nitrogen was maintained.…”
Section: Thermal Reduction Process To Obtain Hollow Fe 3 O 4 Nanospheresmentioning
confidence: 99%
“…Therefore, a tradeoff between insulating dielectric properties and the ability to hysteretically magnetize upon choosing the constituent materials is necessary. Engineering combinations of reliably resistively switching material layers, such as HfO 2 , with complementary compounds reliably magnetizing and also growing, such as Fe 2 O 3 [ 22 , 23 , 24 ], is justified and is to be purposefully examined in terms of both memory effects. Quite naturally, before the examination of coupling between hysteretic magnetization and electrical switching, it would be reasonable to examine the appearance of both effects separately, in order to attempt optimization of the deposition process and the forming structures.…”
Section: Introductionmentioning
confidence: 99%