Structural origin of the high-performance light-emitting InGaN/AlGaN quantum disks

Cheng, Shaobo; Langelier, Brian; Ra, Yong–Ho; Rashid, Roksana Tonny; Mi, Zetian; Botton, Gianluigi A.

doi:10.1039/c9nr01262a

Cited by 16 publications

(10 citation statements)

References 26 publications

(33 reference statements)

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“…Due to different chemical potential for different facets, GaN shows growthrate anisotropy. [27,37] A closer examination of the QWs revealed that the growth planes of InGaN/AlGaN evolved from (0112) to (0111) plane within four pairs of QWs from bottom to top. A schematic 3D illustration of the InGaN/AlGaN QWs@GaN NR is shown in Figure 1d.…”

Section: Resultsmentioning

confidence: 99%

“…[22][23][24][25] Facets with larger slope display decreased quantum-confined Stark effect and thus could exhibit higher light emitting efficiency. [21,26,27] Selected-area molecular-beam epitaxy (MBE) growth has been demonstrated to be a controllable way of growing ternary III-N based nanorods in a bottom-up approach, which could dramatically reduce the number of defects (especially dislocations and/or stacking faults). [26,28,29] The nucleation of the nanowires from adatoms can be limited only to the exposed surface on the substrate leading to uniform morphology of the nanorods.…”

Section: Introductionmentioning

confidence: 99%

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Nanoscale Structural and Emission Properties within “Russian Doll”‐Type InGaN/AlGaN Quantum Wells

Cheng

Langelier

et al. 2020

Advanced Optical Materials

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Due to the increasing desire for nanoscale optoelectronic devices with green light emission capability and high efficiency, ternary III‐N‐based nanorods are extensively studied. Many efforts have been taken on the planar device configuration, which lead to unavoided defects and strains. With selective‐area molecular‐beam epitaxy, new “Russian Doll”‐type InGaN/AlGaN quantum wells (QWs) have been developed, which could largely alleviate this issue. This work combines multiple nanoscale characterization methods and k∙p theory calculations so that the crystalline structure, chemical compositions, strain effects, and light emission properties can be quantitatively correlated and understood. The 3D structure and atomic composition of these QWs are retrieved with transmission electron microscopy and atom probe tomography while their green light emission has been demonstrated with room‐temperature cathodoluminescence experiments. k∙p theory calculations, with the consideration of strain effects, are used to derive the light emission characteristics that are compared with the local measurements. Thus, the structural properties of the newly designed nanorods are quantitatively characterized and the relationship with their outstanding optical properties is described. This combined approach provides an innovative way for analyzing nano‐optical‐devices and new strategies for the structure design of light‐emitting diodes.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Nanoscale Structural and Emission Properties within “Russian Doll”‐Type InGaN/AlGaN Quantum Wells

Cheng

Langelier

et al. 2020

Advanced Optical Materials

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“…Due to the large surface-to-volume ratios of the 1D nanomaterials, the surface plays a key role in the optical properties of 1D nanometer material LEDs [80][81][82][83][84][85][86][87][88][89][90]. Due to the existence of surface states, a Fermi-level pinning effect will occur, and the resulting transverse electric field effect and related surface non-radiative recombination will be very unfavorable to one-dimensional nanostructured-led devices [80][81][82].…”

Section: Core/shell Structure Methodsmentioning

confidence: 99%

“…It can be proved by the experimental results that white LEDs based on dodecagonal ring structures are a platform enabling a high-efficiency warm white light-emitting source. Recently, high-performance InGaN/GaN and InGaN/AlGaN nanowire heterostructure LEDs were prepared by different research groups [88][89][90][91][92][93][94]. A schematic diagram of a nanowire LED with an InGaN/AlGaN core-shell heterostructure is shown in Figure 5.…”

Section: Core/shell Structure Methodsmentioning

confidence: 99%

Surface/Interface Engineering for Constructing Advanced Nanostructured Light-Emitting Diodes with Improved Performance: A Brief Review

et al. 2019

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With the rise of nanoscience and nanotechnologies, especially the continuous deepening of research on low-dimensional materials and structures, various kinds of light-emitting devices based on nanometer-structured materials are gradually becoming the natural candidates for the next generation of advanced optoelectronic devices with improved performance through engineering their interface/surface properties. As dimensions of light-emitting devices are scaled down to the nanoscale, the plentitude of their surface/interface properties is one of the key factors for their dominating device performance. In this paper, firstly, the generation, classification, and influence of surface/interface states on nanometer optical devices will be given theoretically. Secondly, the relationship between the surface/interface properties and light-emitting diode device performance will be investigated, and the related physical mechanisms will be revealed by introducing classic examples. Especially, how to improve the performance of light-emitting diodes by using factors such as the surface/interface purification, quantum dots (QDs)-emitting layer, surface ligands, optimization of device architecture, and so on will be summarized. Finally, we explore the main influencing actors of research breakthroughs related to the surface/interface properties on the current and future applications for nanostructured light-emitting devices.

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“…В работе [12] отмечается, что эпитаксия соединений A 3 B 5 может сопровождаться неравновесным упорядочением двух типов (композиционной автомодуляцией и атомным порядком), которое связывается с реконструкцией поверхности. В частности, для соединений AlGaN встречается как композиционная автомодуляция [13], так и атомный порядок [14]. На рис.…”

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ПЭМ-исследование многослойных буферных структур AlN-AlGaN-GaN на кремниевых подложках

Мясоедов¹,

Сахаров²,

Николаев³

et al. 2020

Письма В Журнал Технической Физики

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By transmission electron microscopy are studied two buffer structures based on AlGaN alloys doped with silicon and don't. The structures were grown on (111) orientated Si substrates by metal-organic vapour-phase epitaxy with consistently decreasing Al content. It is found that noticeable threading dislocation density reduction took place in intermediate layers at changing Al concentration from 32 to 23%. A phase decay and a composition modulation in growth direction in AlGaN layers with Al content 32, 23, 12 and 4% are observed. A model of the layers structure in the composition modulation area is proposed.

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Structural origin of the high-performance light-emitting InGaN/AlGaN quantum disks

Abstract: 3D model showing the boomerang shape of the InGaN/AlGaN quantum disks.

Cited by 16 publications

References 26 publications

Nanoscale Structural and Emission Properties within “Russian Doll”‐Type InGaN/AlGaN Quantum Wells

Nanoscale Structural and Emission Properties within “Russian Doll”‐Type InGaN/AlGaN Quantum Wells

Surface/Interface Engineering for Constructing Advanced Nanostructured Light-Emitting Diodes with Improved Performance: A Brief Review

ПЭМ-исследование многослойных буферных структур AlN-AlGaN-GaN на кремниевых подложках

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