Structural peculiarities of Ge-rich Ga-Ge-Sb-Se chalcogenide glasses

Shiryaev, V.S.; Filatov, A.I.; Karaksina, E.V.; Нежданов, А. В.

doi:10.1016/j.jssc.2021.122454

Cited by 9 publications

(2 citation statements)

References 33 publications

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“…In the case of Ge, this could lead to the formation of Ge-Ge bonds. The formation of these homopolar bonds can eventually lead to a reduction in the T g [37]. The experimentalists have also noticed that as more Ge is added to the glass system, it develops a two-dimensional character held by van der Waals forces, increasing T g [38].…”

Section: Physical Propertiesmentioning

confidence: 99%

Accelerated design of chalcogenide glasses through interpretable machine learning for composition–property relationships

Singla¹,

Mannan²,

Zaki³

et al. 2023

J. Phys. Mater.

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Chalcogenide glasses possess various outstanding properties enabling essential applications, such as optical discs, infrared cameras, and thermal imaging systems. Despite their ubiquitous usage, these materials’ composition–property relationships remain poorly understood, impeding the pace of their discovery. Here, we use a large experimental dataset comprising ~24,000 glass compositions made of 51 distinct elements from the periodic table to develop machine learning (ML) models for predicting 12 properties, namely, annealing point, bulk modulus, density, Vickers hardness, Littleton point, Young’s modulus, shear modulus, softening point, thermal expansion coefficient, glass transition temperature, liquidus temperature, and refractive index. These models are the largest regarding the compositional space and the number of properties covered for chalcogenide glasses. Further, we use SHAP, a game theory-based algorithm, to explain the properties’ compositional control by quantifying each element's role toward model predictions. This work provides a powerful tool for interpreting the model’s prediction and designing new chalcogenide glass compositions with targeted properties. Finally, using the trained ML models, we develop several glass-selection charts that can potentially aid in the rational design of novel chalcogenide glasses for various applications.

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Section: Physical Propertiesmentioning

confidence: 99%

Accelerated design of chalcogenide glasses through interpretable machine learning for composition–property relationships

Singla¹,

Mannan²,

Zaki³

et al. 2023

J. Phys. Mater.

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“…В настоящей работе проведены исследования формы края ПФП для ХС состава Ga 5 Ge 20 Sb 10 Se 65 , легированных ионами Tb 3+ и Dy 3+ (содержание ионов от 0 до 0.3 wt%). Стекла были получены методом прямого плавления особо чистых веществ: Ga, Ge, Sb -6N, Se -5N, Tb и Dy -3N [12,13]. Загрузка компонентов стекла осуществлялась на воздухе и без дополнительной очистки.…”

Section: Introductionunclassified

Оптические свойства халькогенидных стекол системы Ga-Ge-Sb-Se, легированных ионами тербия и диспрозия, вблизи края полосы фундаментального поглощения

Кузюткина¹,

Паршина²,

Романова³

et al. 2023

Оптика И Спектроскопия

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In the paper, results of measurements of the optical response of chalcogenide glasses of the Ga5Ge20Sb10Se65 composition doped with rare-earth ions Tb3+ or Dy3+, in the wavelength range of 0.7 – 1.5 μm by the method of IR spectroscopy are presented. Parameters characterizing the fundamental absorption band edge of the glasses - optical bandgap energy, Urbach tail parameter and weak absorption tail parameter - have been evaluated. It has been found that doping in low concentrations (up to 0.3 mass%) does not influence the optical bandgap energy and optical properties of the glasses in the range of the Urbach tail, but in the range of the weak absorption tail, optical response of the glasses depends on the activator concentration. Crystallization of the glasses produced by the direct melting method also depends on the activator concentration. In the glasses doped with Dy3+, absorption bands of the ion are located in the range of the weak absorption tail of the glass that makes possible energy transfer between the ions and the gap states of the charge carriers.

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