Structural Perfection and Composition of Gallium-Doped Thermomigration Silicon Layers

Lomov, A. A.; Seredin, B. M.; Martyushov, S. Yu.; Zaichenko, Alexander N.; Симакин, С. Г.; Shul’pina, I. L.

doi:10.1134/s1063785020030268

Cited by 4 publications

(3 citation statements)

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“…This value is equal to the concentration of aluminium in a ThM Si(Al) layer obtained in the same conditions with an accuracy better than 5% (Seredin et al, 2019). The rockin-curve measurement in the Bragg geometry from the Si(Al) layer allowed calculation of the average strain in the layer, Ád/d = 2.3 Â 10 À5 , and showed that all aluminium atoms are in substitutional positions (Lomov et al, 2018(Lomov et al, , 2021. Using this strain value as an approximation for the 220 reflection and taking into account the Mo radiation used, we get an expected distance between the peaks Á# ' 1 00 using the formula Ád/d = ÀÁ#cot# B .…”

Section: Diffractionmentioning

confidence: 95%

“…3(b)]. Such an increase contradicts the temperature dependence of solubility of aluminium in silicon (Murray & McAlister, 1984;Lozovskii et al, 1987), the measured SIMS concentrations of aluminium in ThM layers (Seredin et al, 2019) and channels (Buchin et al, 2004;Lomov et al, 2018), and X-ray diffraction data (Yoshikawa & Morita, 2003;Lomov et al, 2018Lomov et al, , 2021.…”

Section: Figurementioning

confidence: 96%

“…The first attempts of characterization of Si(Al) channels using rocking-curve measurements in the Bragg geometry showed that the angular range between the diffraction peaks from the matrix and from the channel is dependent mainly on the curvature of the crystallographic planes on the channel borders (Lomov et al, 2018(Lomov et al, , 2021. The small impact of the value of the strain in the Si(Al) channel on the angular distance between the diffraction peaks of the channel and matrix compared with the FWHM of the double-crystal curves of the 333 reflection did not allow evaluation of the strain using the standard device capabilities.…”

Section: Introductionmentioning

confidence: 99%

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Laue X-ray diffraction studies of the structural perfection of Al-doped thermomigration channels in silicon

2021

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Si(111) wafers patterned with an array of vertical 100 µm-wide Al-doped (1 × 1019 cm−3) p-channels extending through the whole wafer were studied by X-ray Laue diffraction techniques. The X-ray techniques included projection topography, and measurement of rocking curves and cross sections in the vicinity of the 02\overline 2 reciprocal space node in the double- and triple-crystal geometry, respectively. The channels are uniform along the depth of the wafer, and their structural perfection is comparable to that of the silicon matrix between the channels. Simulation of the rocking curves was performed using the methods of the dynamical theory of X-ray diffraction. The rocking-curve calculations both taking into account and neglecting the effect of the instrumental function were carried out using the Takagi–Taupin equations. The calculated angular dependences of intensities of both diffracted and transmitted X-rays correspond well to the experimentally obtained rocking curves and demonstrate their high sensitivity to the structural distortions in the channel. An unambiguous reconstruction of strain and structural distortions in the Si(Al) channel using the Laue diffraction data requires further development of the theoretical model.

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Section: Diffractionmentioning

confidence: 95%