Structural properties of CdSe corn-like nanowires grown by chemical bath deposition

Gubur, Hulya Metin; Septekin, Fethiye; Alpdoğan, Soner; Sahan, B; Zeyrek, Birsen Kesik

doi:10.1007/s10854-016-4748-2

Cited by 5 publications

(3 citation statements)

References 34 publications

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“…It is clearly visible from Figure 3 (a) that nanowires (NWs) and spherical nanoparticles (NPs) were formed. These NWs are attributed to the CdSe semiconductor compound, as mentioned in our prior studies [10,17,21–23] . Figure 3 (b) demonstrates an image of these nanowires (NWs) at a magnification of 100 000×, along with an inset image at 50 000× magnification.…”

Section: Resultsmentioning

confidence: 53%

“…These NWs are attributed to the CdSe semiconductor compound, as mentioned in our prior studies. [10,17,[21][22][23] Figure 3 (b) demonstrates an image of these nanowires (NWs) at a magnification of 100 000×, along with an inset image at 50 000× magnification. By measurements taken on several nanowires, the diameters of NWs were determined in the range of 124 nm to 236 nm.…”

Section: Morphological Propertiesmentioning

confidence: 99%

“…We have employed the CBD technique in our lab to produce thin films of CdS, [16] CdSe, [17] ZnS, [18] ZnSe, [19] SnS, [20] and CdS/CdSe [10] . Moreover, CdSe was obtained as a nanowire (NW) structure using the CBD method on various substrates [17,21–23] . This study focused on a comprehensive investigation of the structural, optical, electrical, and photoelectrochemical properties of the CdS/CdSe heterojunctions produced on indium doped tin oxide (ITO) coated glass and p–Si substrates.…”

Section: Introductionmentioning

confidence: 99%

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Photoelectrochemical Properties and Characterization of CdS/CdSe Heterojunctions Obtained by CBD on ITO and p–Si Substrates

Ozmen,

Diallo,

Suna Karatekin

et al. 2024

ChemistrySelect

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This research investigates the optical, structural, electrical, and photoelectrochemical characteristics of CdS/CdSe heterojunctions formed on both ITO and p–Si substrates. The deposition of CdS and CdSe films was carried out using the chemical bath deposition method, which is economical and simple method. The optical, structural, and electrical properties of CdS/CdSe heterojunctions were analyzed through UV–Vis spectrometry, photoluminescence (PL) spectroscopy, field emission–scanning electron microscopy (FE‐SEM), X‐ray diffraction (XRD), Raman spectroscopy, and Hall‐effect measurements. Furthermore, Mott–Schottky analysis was employed to investigate the electrochemical properties of the semiconductor CdS/CdSe heterojunctions on both ITO and p–Si substrates. Additionally, the photoelectrochemical investigations of CdS/CdSe heterojunctions on ITO and p–Si substrates were conducted by electrochemical analyses using linear sweep voltammetry (LSV), electrochemical impedance spectroscopy (EIS), and photocurrent – time plots under both dark and illuminated conditions.

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Section: Resultsmentioning

confidence: 53%