Structural study of the Si(100)2×2-In surface

Sakama, Hiroshi; Murakami, Kenichi; Nishikata, K.; Kawazu, Akira

doi:10.1103/physrevb.53.1080

Cited by 17 publications

(11 citation statements)

References 12 publications

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“…The results for Ga and In also agree with recent experimental results obtained by Sakama et al 18,19 . The surface pattern at 0.5 ML coverage is 2×2.…”

Section: A 05 ML Of Coveragesupporting

confidence: 91%

“…We attempt to put the work in perspective and fill the holes by presenting new results. In particular, we find that our calculations at 0.5 ML give results in accord with Northrup's predictions and also with the recent experimental results obtained by Sakama et al 17,18,19 . More significantly, we obtain an orientational transition ('Para' to 'Ortho') for Al dimers as we go from 0.5 ML to 1 ML coverage.…”

Section: Introductionsupporting

confidence: 92%

“…All the experimental results 9,10,11,12,13,14,15,16,17,18,19,20 point to the fact that at low temperatures Al, Ga and In form 2×2 structure on the Si(001) surface at 0.5 ML coverage.…”

Section: Introductionmentioning

confidence: 93%

“…Low-energy-electron-diffraction (LEED), Auger electron spectroscopy (AES) and Scanning tunneling microscopy (STM) studies have provided much informations about the interaction of Al, Ga and In overlayers on the Si(001) surface at different coverages and at different temperatures 9,10,11,12,13,14,15,16,17,18,19,20 . Ide et al 9 observed 2×2, 2×3, 4×5, and 1×7 structures depending on the coverages less than 1 monolayer (ML) of Al on Si(001) and the substrate temperature in their LEED and AES experiments.…”

Section: Introductionmentioning

confidence: 99%

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Para to ortho transition of metallic dimers on Si(001)

Gupta

Batra

2004

Phys. Rev. B

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Extensive electronic structure calculations are performed to obtain the stable geometries of metals like Al, Ga and In on the Si(001) surface at 0.5 ML and 1 ML coverages. Our results coupled with previous theoretical findings explain the recent experimental data in a comprehensive fashion. At low coverages, as shown by previous works, 'Para' dimers give the lowest energy structure. With increasing coverage beyond 0.5 ML, 'Ortho' dimers become part of low energy configurations leading toward a 'Para' to 'Ortho' transition at 1 ML coverage. For In mixed staggered dimers ('Ortho' and 'Para') give the lowest energy configuration. For Ga, mixed dimers are non-staggered, while for Al 'Para' to 'Ortho' transition of dimers is complete. Thus at intermediate coverages between 0.5 and 1 ML, the 'Ortho' and 'Para' dimers may coexist on the surface. Consequently, this may be an explanation of the fact that the experimental observations can be successfully interpreted using either orientation. A supported zigzag structure at 0.5 ML, which resembles (CH)x, does not undergo a dimerization transition, and hence stays semi-metallic. Also, unlike (CH)x the soliton formation is ruled out for this structure.

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“…The results for Ga and In also agree with recent experimental results obtained by Sakama et al 18,19 . The surface pattern at 0.5 ML coverage is 2×2.…”

Section: A 05 ML Of Coveragesupporting

confidence: 91%

Section: Introductionsupporting

confidence: 92%

“…All the experimental results 9,10,11,12,13,14,15,16,17,18,19,20 point to the fact that at low temperatures Al, Ga and In form 2×2 structure on the Si(001) surface at 0.5 ML coverage.…”

Section: Introductionmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

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Para to ortho transition of metallic dimers on Si(001)

Gupta

Batra

2004

Phys. Rev. B

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“…[2][3][4][5][6][7][8][9][10][11][12][13][14][15] In particular, it has been established that In deposition onto the Si͑100͒ surface held at temperature below 150°C results in successive formation of 2ϫ3, 2ϫ5, and 2ϫ2 surface phases at In coverages of 0.3, 0.4, and 0.5 ML, respectively, 8 while upon high-temperature deposition ͑or annealing͒ a 4ϫ3 surface phase is formed with an In coverage of 0.5 ML. 1 The structure of low-temperature phases, 2ϫ3, 2ϫ5, and 2ϫ2, has been determined conclusively.…”

Section: Introductionmentioning

confidence: 99%

Structural model for theSi(100)4×3−Insurface phase

et al. 1998

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A model of the atomic arrangement of the Si͑100͒4ϫ3-In surface phase is proposed on the basis of the known data and the appearance of the Si͑100͒4ϫ3-In surface found in the present STM study at low bias voltages. The model incorporates a 4ϫ1-reconstructed Si͑100͒ substrate having every second top Si atom double row missing. Indium atoms of the overlayer occupy the sites where each In atom is bonded to one Si atom of top Si dimer and to two Si atoms in the lower bulklike Si͑100͒ substrate layer. Three Si dimers and six In atoms form a unit cluster of the Si͑100͒4ϫ3-In surface reconstruction. The model successfully accounts for all available experimental data. ͓S0163-1829͑98͒01820-7͔

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