Structure and dynamics of a silver-doped chalcogenide glass: An ab initio study

Igram, Dale J.; Castillo, Horacio E.; Drabold, D. A.

doi:10.1016/j.jnoncrysol.2019.03.012

Cited by 3 publications

(1 citation statement)

References 55 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…studies. Notably, preliminary information about what to expect when Ag diffuses in chalcogenide glasses, [1][2][3][4] the mechanism of diffusion, [5,6] how the structure of these glasses is developing, [7][8][9] and the secrets of the phase change effect. [10,11] The phase change effect and the invention of the phase change memory devices based on chalcogenide glasses in 1968 [12] established a new era in the development of the information storage and the study of recrystallization of the disordered systems.…”

Section: Introductionmentioning

confidence: 99%

Effect of Ion Irradiation on Amorphous and Crystalline Ge–Se and Their Application as Phase Change Temperature Sensor

Simon

Jones

Sakaguchi

et al. 2020

Physica Status Solidi (b)

View full text Add to dashboard Cite

Research on phase change materials is predominantly focused on their application as memory devices or for temperature control which requires low phase change temperature. The Ge–Se binary chalcogenide glass system with its wide glass‐forming region is a potential candidate for high‐temperature and high‐radiation phase change applications. Herein, the concept of employing Ge x Se100−x glasses to monitor high temperature (450–528 °C) using the phase change effect, is reported. Materials selection, device structure, and performance of prototype sensors are analyzed. In addition, the effect of heavy ion irradiation by Xe ions with energies of 200, 600, and 1000 keV (fluence ≈1014 cm−2) on the Ge x Se100−x (x = 30, 33, 40) thin films and phase change devices is studied. The irradiation effect on the amorphous and crystalline structure of the thin films is evaluated by Raman spectroscopy and X‐ray diffraction (XRD). Although the changes in the structural units of amorphous films are negligible, in crystalline films orthorhombic‐GeSe2 crystals are found to be most affected by irradiation and a new phase, orthorhombic GeSe is found in the thin films after irradiation. The performance of a sensor with an active film of Ge40Se60 is also shown as an example.

show abstract

Section: Introductionmentioning

confidence: 99%

Effect of Ion Irradiation on Amorphous and Crystalline Ge–Se and Their Application as Phase Change Temperature Sensor

Simon

Jones

Sakaguchi

et al. 2020

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

Silver photodiffusion into amorphous Ge chalcogenides

Sakaguchi

Hanashima

Simon

et al. 2020

Eur. Phys. J. Appl. Phys.

View full text Add to dashboard Cite

Silver photodiffusion into amorphous chalcogenides involves the movement of ions controlled by a UV-visible light illumination, and has potential application to memory devices. Understanding the kinetics of this phenomenon will expand the range of possible applications. Herein, we report the excitation photon energy dependence of the silver photodiffusion kinetics in Ag/amorphous Ge20S80/Si substrate stacks, probed by neutron reflectivity using four light-emitting diodes with different peak wavelengths. Time-dependent changes were clearly observed in all three of the Ag/Ag-doped reaction/chalcogenide host layers, in terms of layer thickness, scattering length density, and roughness. Silver photodiffusion effectively occurred when the excitation photon energy was greater than the optical gap of the chalcogenide host material. Excitation of lone-pair electrons to anti-bonding states at the chalcogenide layer therefore appears to play a crucial role in triggering silver photodiffusion.

show abstract