Structure and elastic properties of amorphous silicon carbon nitride films

Lehmann, Gerhard; Hess, Peter; Wu, Jih-Jen; Wu, Chien-Ting; Wong, Tak Sing; Chen, K. H.; Chen, L. C.; Lee, H. Y.; Amkreutz, Marc; Frauenheim, Thomas

doi:10.1103/physrevb.64.165305

Cited by 57 publications

(26 citation statements)

References 41 publications

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“…Analyzing x-ray photoelectron spectra of the ground levels of SiCN films shows that they have mainly Si−N, Si−C, C−C, and C−N bonds [12,15,17,18]. There are also Si-O bonds in films.…”

Section: Introductionmentioning

confidence: 97%

“…Among physical deposition methods, we single out radio frequency magnetron sputtering (RFMS [12−14]), direct current magnetron sputtering (DCMS [15,16]), ion beam sputtering (IBS [9,17]), and pulsed laser deposition (PLD [18]). As targets for reactive sputtering in the presence of argon and nitrogen (or, less frequently, methane), SiC, Si 4 C, Si + C, SiC + Si + C, and Si 3 N 4 + C plates were most often used [10−18].…”

Section: Introductionmentioning

confidence: 99%

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Characteristics of thin plasmachemical silicon carbon nitride films deposited using hexamethyldisilane

Иващенко

Porada

Ivashchenko

et al. 2009

Powder Metall Met Ceram

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Silicon carbon nitride (SiCN) coatings are produced by plasma-enhanced chemical vapor deposition using hexamethyldisilane, N 2 , and H 2 as precursors at various nitrogen flow rates (F N ). X-ray diffraction data, Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy, adhesion, friction coefficient, abrasive wear resistance, and microprofiling of the film surface are used to characterize the coatings deposited on silicon substrates. The x-ray diffraction analysis shows that all the films have an amorphous structure. The chemical bonding in the films results from the main , the wear resistance of the films increases and their friction coefficient decreases since Si−C bonds are strengthened. The SiCN films deposited using hexamethyldisilane as the main source material exhibit tribological properties that are comparable with those of amorphous SiCN films deposited using other precursors.

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Section: Introductionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Characteristics of thin plasmachemical silicon carbon nitride films deposited using hexamethyldisilane

Иващенко

Porada

Ivashchenko

et al. 2009

Powder Metall Met Ceram

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“…5 The protective properties of SiC x N y materials appear as an intermediate matrix to meet the demands in hard coating technology and concurrently, the tunability of SiC x N y 's electrical and optical properties raises its interest in the field of Photonics. SiC x N y structures have appeal to researchers for wear-resistant 6 and corrosion-resistant coatings, 7 and recently, for silicon-based anode materials in lithium ion batteries. 8 In addition, SiC x N y structures are used for gate dielectrics in thin film transistors 9 and diffusion barriers.…”

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confidence: 99%

Influence of Deposition Conditions on the Characteristics of Luminescent Silicon Carbonitride Thin Films

Khatami

Bosco

Wójcik

et al. 2018

ECS J. Solid State Sci. Technol.

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The influence of the substrate temperature and argon gas flow on the compositional, structural, optical, and light emission properties of amorphous hydrogenated silicon carbonitride (a-SiC x N y :H) thin films were studied. Thin films were fabricated using electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR PECVD) at a range of substrate temperatures from 120 to 170 • C (corresponding to deposition temperatures of 300 to 450 • C) in a mixture of SiH 4 , N 2 , and CH 4 precursors. Variable angle spectroscopic ellipsometer (VASE), elastic recoil detection (ERD), and Rutherford backscattering spectrometry (RBS) verified optical bandgap widening, layer densification, and an increase of the refractive index at higher substrate temperatures. The microstructure of a-SiC x N y :H z thin films was determined by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy. The substrate temperature strongly affected the binding state of all atoms, and in particular, carbon atoms attached to silicon and nitrogen, as well as hydrogen-terminated bonds. We correlated the films' microstructural changes to a higher species' mobility arriving on the growin layer at higher temperatures. Photoluminescence (PL) measurements showed that the total intensity of visible light emission increased. A systematic blueshift of the centroid of the wide PL peak was observed following the increase of optical gap. 2 This is a consequence of their unique properties inherited from the combined properties of binary substructures, silicon carbide (SiC), silicon nitride (SiN), and carbonitride (CN). On the one hand, the durability and hardness of SiN structures cannot compete with those of carbon-based hard counterparts such as diamond-like carbon (DLC), CN, and SiC materials.3 On the other hand, carbon-based films do not offer the required properties for current optical designs, 4 while SiN thin films have been considered as the basis for several optoelectronic devices. 5 The protective properties of SiC x N y materials appear as an intermediate matrix to meet the demands in hard coating technology and concurrently, the tunability of SiC x N y 's electrical and optical properties raises its interest in the field of Photonics. SiC x N y structures have appeal to researchers for wear-resistant 6 and corrosion-resistant coatings, 7 and recently, for silicon-based anode materials in lithium ion batteries. 8 In addition, SiC x N y structures are used for gate dielectrics in thin film transistors 9 and diffusion barriers.10 They appear to broaden the optical parameter space required for the application of ultraviolet (UV) detectors 11,12 and the passivation layer in the third generation "all-silicon" tandem solar cells. 13,14 To this end, Chen et al. reported a direct bandgap of 3.8 eV for c-Si 2 N 4 C 15 and Azam et al. 16 investigated the tunability of the bandgap depending on the dominant phase present in the SiC x N y layer. We previously showed that the visible photoluminescence (PL) emission from ...

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“…Remarkably, a ternary compound might allow independent or simultaneous tailoring of their atomic and electronic structures by composition regulation; thus an effective tuning of the material properties can be established in a wide range [4][5][6][7]. It can be anticipated that the ternary Al-C-N compounds will exhibit some individual characters as they contain metal atoms, consequently they promise versatile applications in electronics due to the excellent properties such as readiness of metallization [8] and extreme electrical insulation.…”

Section: Introductionmentioning

confidence: 98%

Effect of substrate temperature on the growth of ternary Al–C–N thin films by reactive magnetron sputtering

et al. 2005

Journal of Crystal Growth

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Structure and elastic properties of amorphous silicon carbon nitride films

Cited by 57 publications

References 41 publications

Characteristics of thin plasmachemical silicon carbon nitride films deposited using hexamethyldisilane

Characteristics of thin plasmachemical silicon carbon nitride films deposited using hexamethyldisilane

Influence of Deposition Conditions on the Characteristics of Luminescent Silicon Carbonitride Thin Films

Effect of substrate temperature on the growth of ternary Al–C–N thin films by reactive magnetron sputtering

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