2011
DOI: 10.1016/j.jnoncrysol.2010.11.055
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Structure and optical properties of amorphous GeSx films prepared by PLD

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Cited by 21 publications
(12 citation statements)
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“…In the present experiment, a white light of xenon lamp was used. In the figure, the transmission of the light with the wavelength of 397 nm, which has greater energy (3.12 eV) than the optical gap, 2.59 eV, 25 is shown. Supposing that the light is used to excite lone-pair electrons to anti-bonding states on chalcogen (S) atoms, the efficiency of the photo-excitation should be proportional to the transmission of light whose energy has greater than the optical gap, and "chalcogen atoms" should be exposed to the light.…”
Section: Kinetics Of Silver Photo-diffusionmentioning
confidence: 99%
“…In the present experiment, a white light of xenon lamp was used. In the figure, the transmission of the light with the wavelength of 397 nm, which has greater energy (3.12 eV) than the optical gap, 2.59 eV, 25 is shown. Supposing that the light is used to excite lone-pair electrons to anti-bonding states on chalcogen (S) atoms, the efficiency of the photo-excitation should be proportional to the transmission of light whose energy has greater than the optical gap, and "chalcogen atoms" should be exposed to the light.…”
Section: Kinetics Of Silver Photo-diffusionmentioning
confidence: 99%
“…In some cases, these structures largely differ (in terms of quantity of defects) from those obtained by the common melt-quenching (MQ) technique used for the preparation of bulk glasses. It appears that g-GeS x (with x = 2, 4, 6) films, obtained by pulsed laser deposition from the pristine bulk glasses (obtained by MQ), show a significant content of defects and "wrong bonds" [7][8][9]. In this case, the departure from perfect chemical order is due to the fact that as-deposited g-GeS x films are far away from the equilibrium state [7].…”
Section: Introductionmentioning
confidence: 99%
“…As a subclass of these materials, chalcogenide glassy films are useful for many applications such as optoelectronic and nonvolatile memory devices [4,5]. For example, amorphous Ge 2 Sb 2 Te 5 and GeS x films prepared by deposition techniques can be used as phasechange and optical materials, respectively [6,7]. The structure and chemical order of these films are found to be strongly dependent on the chalcogenide composition and conditions used for the deposition.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…In some cases, these structures largely differ (in terms of quantity of defects) from those obtained by common melt-quenching methods used for the preparation of bulk glasses. It appears that glassy GeS x (with x = 2, 4, 6) films, obtained by pulsed laser deposition from the pristine bulk glasses, show a significant content of defects and "wrong bonds" (such as homopolar bonds) [42][43][44]. In this case, the departure from perfect chemical order is due to the fact that as-deposited g-GeS x films are far away from the equilibrium state [42][43][44].…”
Section: Chalcogenide Surfacesmentioning
confidence: 99%