2008 International Interconnect Technology Conference 2008
DOI: 10.1109/iitc.2008.4546929
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Structure-Designable Formation-Method of Super Low-k SiOC Film (k=2.2) by Neutral-Beam-Enhanced-CVD

Abstract: Ar neutral beam enhanced chemical vapor deposition can control the dielectric constant and film modulus of low-k SiOC deposited on Si substrates precisely because it avoids precursor dissociation due to electron collisions and UV photons in plasma. Optimizing the ratio between Si-O and Si-(CH 3 ) x as well as the proportions of linear, network, and cage Si-O structures by changing the precursor, we obtained a k of 2.2 and a reasonable modulus by using either dimethyl diethoxy silane or dimethyl dimethoxy silan… Show more

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“…In order to confirm the role of atomic oxygen on coating properties, FTIR analysis was carried out for various ratios of O 2 : HMDSO. GRILL [16,17] et al deconvoluted the Si-O-Si asymmetric stretching band in the range of 1250∼ 950 cm −1 into three peaks centered at 1135 cm −1 , 1063 cm −1 , and 1023 cm −1 . They were considered to correspond to cage, network and linear structures based on the different bond angles, respectively.…”
Section: Variation Of Oxygen (O 2 ) Concentrationmentioning
confidence: 99%
“…In order to confirm the role of atomic oxygen on coating properties, FTIR analysis was carried out for various ratios of O 2 : HMDSO. GRILL [16,17] et al deconvoluted the Si-O-Si asymmetric stretching band in the range of 1250∼ 950 cm −1 into three peaks centered at 1135 cm −1 , 1063 cm −1 , and 1023 cm −1 . They were considered to correspond to cage, network and linear structures based on the different bond angles, respectively.…”
Section: Variation Of Oxygen (O 2 ) Concentrationmentioning
confidence: 99%