2020
DOI: 10.1007/s10854-020-03030-5
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Structure, dielectric, and ferroelectric properties of Ba0.85Ca0.15Zr0.1Ti0.9O3 ceramics sintered at various temperatures

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Cited by 13 publications
(6 citation statements)
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“…However, there are not only the frequency that can influence on , but it is also the grain size. It was found that, as grain size of the BCZT ceramic increased,  decreased due to the occurrence of long-range ferroelectric interaction and domain thickening, as reported by Wang et al [15].…”
Section: Frequency-dependent Dielectric Propertiessupporting
confidence: 60%
See 3 more Smart Citations
“…However, there are not only the frequency that can influence on , but it is also the grain size. It was found that, as grain size of the BCZT ceramic increased,  decreased due to the occurrence of long-range ferroelectric interaction and domain thickening, as reported by Wang et al [15].…”
Section: Frequency-dependent Dielectric Propertiessupporting
confidence: 60%
“…It is apparent that peak overlapping can be seen in the enlargement of (200)p reflection in both powder and ceramic which suggested that the occurrence of mixed phase was observed at room temperature. In addition, the enhancements of sharpness and clear splitting of (200)p reflection were found in the ceramic sample, indicating the improvement of crystallization from high sintering temperature [15]. Interestingly, although Wang [14] reported that the shifting of (200)p reflection to lower 2 was observed in the BCZT ceramic in comparison with the BCZT powder due to the occurrence of the residual stress in the ceramic, this work found the contradict result; the (200)p reflection of the BCZT ceramic shifts to higher 2 instead.…”
Section: Xrd Profiles At Room Temperaturementioning
confidence: 84%
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“…For all samples the grain boundary resistance value is higher compared to grain resistance because the grain boundaries are normally more insulating and capacitive than grains [54]. With the increase in temperature, grain boundary resistance decreases and conductivity increases and can be attributed to the ionisation of oxygen vacancies at high temperatures [55]. Fig.…”
Section: Temperature-dependent Dielectric Analysismentioning
confidence: 85%